5秒后页面跳转
MASW-001100-1190_2 PDF预览

MASW-001100-1190_2

更新时间: 2024-11-05 11:19:07
品牌 Logo 应用领域
泰科 - TE 二极管开关
页数 文件大小 规格书
9页 339K
描述
HMIC Silicon PIN Diode Switches

MASW-001100-1190_2 数据手册

 浏览型号MASW-001100-1190_2的Datasheet PDF文件第2页浏览型号MASW-001100-1190_2的Datasheet PDF文件第3页浏览型号MASW-001100-1190_2的Datasheet PDF文件第4页浏览型号MASW-001100-1190_2的Datasheet PDF文件第5页浏览型号MASW-001100-1190_2的Datasheet PDF文件第6页浏览型号MASW-001100-1190_2的Datasheet PDF文件第7页 
MASW-001100-1190  
MASW-002100-1191  
MASW-003100-1192  
HMIC™ Silicon PIN Diode Switches  
V6  
Features  
Broad Bandwidth  
Specified from 50MHz to 20GHz  
Usable from 50MHz to 26.5GHz  
Lower Insertion Loss / Higher Isolation  
than pHempt  
MASW-001100-1190  
Rugged  
Fully Monolithic,  
Glass Encapsulated Construction  
Up to +33dBm C.W. Power Handling  
RoHS Compliant  
Description  
The MASW-001100-1190, MASW-002100-1191 and  
MASW-003100-1192 are broadband monolithic  
switches using series and shunt connected silicon  
PIN diodes. They are designed for use as 2W, high  
performance switches in applications up to 26.5GHz.  
They provide performance levels superior to those  
realized by hybrid MIC designs incorporating  
beamlead and PIN chip diodes that require chip and  
wire assembly.  
MASW-002100-1191  
These switches are fabricated using M/A-COM’s  
patented HMICTM (Heterolithic Microwave Integrated  
Circuit) process, US Patent 5,268,310. This process  
allows the incorporation of silicon pedestals that  
form series and shunt diodes or vias by imbedding  
them in low loss, low dispersion glass. By using  
small spacing between elements, this combination of  
silicon and glass gives HMIC devices low loss and  
high isolation performance through low  
millimeter frequencies.  
MASW-003100-1192  
Large bond pads facilitate the use of low inductance  
ribbon leads, while gold backside metallization  
allows for manual or automatic chip bonding via  
80/20, AuSn solder or conductive Ag epoxy.  
Parameter  
Absolute Maximum  
-65oC to +125oC  
-65oC to +150oC  
+175oC  
Operating Temperature  
Storage Temperature  
Junction Temperature  
Applied Reverse Voltage  
RF C.W. Incident Power  
Bias Current +25°C  
| - 50V |  
+33dBm C.W.  
±20mA  
Max operating Conditions for a Combination of  
RF Power, D.C. Bias and Temperature:  
+33dBm CW @ 15mA (per diode) @+85°C  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

与MASW-001100-1190_2相关器件

型号 品牌 获取价格 描述 数据表
MASW-001100-11900G TE

获取价格

HMIC™ Silicon PIN Diode Switches RoHs Complia
MASW-001100-11900W TE

获取价格

HMIC™ Silicon PIN Diode Switches RoHs Complia
MASW-001150-1316 TE

获取价格

SURMOUNT PIN Diode Switch Element with Thermal Terminal
MASW-001150-1316 MACOM

获取价格

HMIC PIN Diode,50W
MASW-001150-13160 TE

获取价格

SURMOUNT PIN Diode Switch Element
MASW-001150-13160_V5 TE

获取价格

SURMOUNT PIN Diode Switch Element
MASW-001150-13160P TE

获取价格

SURMOUNT PIN Diode Switch Element with Thermal Terminal
MASW-001150-13160-V5 TE

获取价格

SURMOUNT PIN Diode Switch Element
MASW-001150-13160W TE

获取价格

SURMOUNT PIN Diode Switch Element with Thermal Terminal
MASW-002100-1191 TE

获取价格

Broadband Monolithic Silicon PIN Diode Switches