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MASW-001100-11900G PDF预览

MASW-001100-11900G

更新时间: 2024-11-05 05:48:55
品牌 Logo 应用领域
泰科 - TE 二极管开关射频微波分离技术隔离技术
页数 文件大小 规格书
9页 339K
描述
HMIC™ Silicon PIN Diode Switches RoHs Compliant

MASW-001100-11900G 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.12Is Samacsys:N
其他特性:USABLE TO 26.5 GHZ构造:COMPONENT
最大输入功率 (CW):33.01 dBm最大插入损耗:1.2 dB
最大工作频率:20000 MHz最高工作温度:125 °C
最低工作温度:-65 °C射频/微波设备类型:SPST
Base Number Matches:1

MASW-001100-11900G 数据手册

 浏览型号MASW-001100-11900G的Datasheet PDF文件第2页浏览型号MASW-001100-11900G的Datasheet PDF文件第3页浏览型号MASW-001100-11900G的Datasheet PDF文件第4页浏览型号MASW-001100-11900G的Datasheet PDF文件第5页浏览型号MASW-001100-11900G的Datasheet PDF文件第6页浏览型号MASW-001100-11900G的Datasheet PDF文件第7页 
MASW-001100-1190  
MASW-002100-1191  
MASW-003100-1192  
HMIC™ Silicon PIN Diode Switches  
RoHs Compliant  
Rev. V6  
Features  
Broad Bandwidth  
Specified from 50MHz to 20GHz  
Usable from 50MHz to 26.5GHz  
Lower Insertion Loss / Higher Isolation  
than pHempt  
MASW-001100-1190  
Rugged  
Fully Monolithic,  
Glass Encapsulated Construction  
Up to +33dBm C.W. Power Handling  
Description  
The MASW-001100-1190, MASW-002100-1191 and  
MASW-003100-1192 are broadband monolithic  
switches using series and shunt connected silicon  
PIN diodes. They are designed for use as 2W, high  
performance switches in applications up to  
26.5GHz. They provide performance levels superior  
to those realized by hybrid MIC designs  
incorporating beamlead and PIN chip diodes that  
require chip and wire assembly.  
MASW-002100-1191  
These switches are fabricated using M/A-COM’s  
patented HMICTM (Heterolithic Microwave Integrated  
Circuit) process, US Patent 5,268,310. This process  
allows the incorporation of silicon pedestals that  
form series and shunt diodes or vias by imbedding  
them in low loss, low dispersion glass. By using  
small spacing between elements, this combination  
of silicon and glass gives HMIC devices low loss  
and high isolation performance through low  
millimeter frequencies.  
Large bond pads facilitate the use of low inductance  
ribbon leads, while gold backside metallization  
allows for manual or automatic chip bonding via  
80/20, AuSn solder or conductive Ag epoxy.  
MASW-003100-1192  
Parameter  
Absolute Maximum  
-65oC to +125oC  
-65oC to +150oC  
+175oC  
Operating Temperature  
Storage Temperature  
Junction Temperature  
Applied Reverse Voltage  
RF C.W. Incident Power  
Bias Current +25°C  
| - 50V |  
+33dBm C.W.  
±20mA  
Max operating Conditions for a Combination of  
RF Power, D.C. Bias and Temperature:  
+33dBm CW @ 15mA (per diode) @+85°C  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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