Broadband Monolithic
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
Silicon PIN Diode Switches
Rev 2.0
Features
• Broad Bandwidth
MASW-001100-1190
Specified from 50MHz to 20GHz
Usable from 50MHz to 26.5GHz
• Lower Insertion Loss / Higher Isolation than pHempt
• Rugged, Fully Monolithic, Glass Encapsulated
Construction
• Up to +33dBm C.W. Power Handling @ + 25°C
Description
The MASW-001100, MASW-002100 and
MASW-003100 are broadband monolithic switches using
series and shunt connected silicon PIN diodes. They
are designed for use as moderate signal, high
performance switches in applications up to 26.5GHz.
They provide performance levels superior to those
realized by hybrid MIC designs incorporating beam lead
and PIN chip diodes that require chip and wire
assembly.
MASW-002100-1191
These switches are fabricated using M/A-COM’s
patented HMICTM (Heterolithic Microwave Integrated
Circuit) process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that form
series and shunt diodes or vias by imbedding them in
low loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and glass
gives HMIC devices low loss and high isolation
performance through low millimeter frequencies.
MASW-003100-1192
Large bond pads facilitate the use of low inductance
ribbon leads, while gold backside metallization allows for
manual or automatic chip bonding via 80/20 AuSn solder
or conductive Ag epoxy.
@ +25°C
Absolute Maximum Ratings
Parameter
Absolute Maximum
-65oC to +125oC
-65oC to +150oC
+175oC
| - 50V |
+33dBm C.W.
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF C.W. Incident Power
Bias Current +25°C
±20mA
Specification Subject to Change Without Notice
M/A-COM, Inc. _____________________________________________________________________________________
1
North America: Tel. (800) 366-2266
Fax (800) 618-8883
þ
Asia/Pacific: Tel. +81 3 3263 8761
Fax +81 3 3263 8769
þ
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020