Datasheet > MAGX-000912-500L0X

MAGX-000912-500L0X

更新时间： 2024-11-06 01:12:23

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泰科 - TE		/
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GaN on SiC HEMT Pulsed Power Transistor

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MAGX-000912-500L0x

GaN on SiC HEMT Pulsed Power Transistor

500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty

Rev. V6

MAGX-000912-500L00

Features

 GaN on SiC Depletion-Mode Transistor

Technology

 Internally Matched

 Common-Source Configuration

 Broadband Class AB Operation

 RoHS* Compliant and 260 °C Reflow Compatible

 +50 V Typical Operation



MTTF = 600 years (T_J< 200 °C)

Applications

 Civilian Air Traffic Control (ATC), L-Band

MAGX-000912-500L0S

Secondary Radar for IFF and Mode-S Avionics.

 Military radar for IFF and Data Links.

Description

The MAGX-000912-500L00 is a gold metalized

matched Gallium Nitride (GaN) on Silicon

Carbide (SiC) RF power transistor optimized for

pulsed avionics and radar applications. Using state

of the art wafer fabrication processes, these high

performance transistors provide high gain,

efficiency, bandwidth, and ruggedness over a wide

bandwidth for today’s demanding application needs.

High breakdown voltages allow for reliable and

Ordering Information¹

Part Number

Description

Flanged

stable operation under more extreme

mismatch

MAGX-000912-500L00

MAGX-000912-500L0S

load conditions compared with older semiconductor

technologies.

Flangeless

960 - 1215 MHz

Evaluation Board

MAGX-A00912-500L00

1. When ordering the evaluation board, please indicate on sales

order notes if it will be used for:

A. Standard Flange devices

B. Earless Flange devices

Typical RF Performance under standard operating conditions, P_OUT= 500 W (Peak)

VSWR-S

(3:1)

VSWR-T

(5:1)

Freq

(MHz)

P_IN

(W)

Gain

(dB)

I_D

(A)

Eff.

(%)

(dB)

Droop

(dB)

+1dB OD

(W)

960

5.8

4.9

4.4

4.6

19.4

20.1

20.6

20.5

17.2

16.2

15.8

17.0

15.7

58.1

61.4

63.4

58.7

63.7

-6.4

-7.6

0.4

0.3

0.2

563

551

560

548

558

1025

1090

1150

1215

-9.6

-17.0

-12.6

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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与MAGX-000912-500L0X相关器件

型号	品牌	获取价格	描述	数据表
MAGX-000912-SB0PPR	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor 125W
MAGX-000912-SB1PPR	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor 250W
MAGX-000912-SB3PPR	TE	获取价格	GaN on SiC Depletion-Mode Transistor Technology
MAGX-001090-600L00	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
MAGX-001090-600L0S	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-001090-600L0X	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-001090-SB0PPR	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
MAGX-001214-125L00	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor 125W
MAGX-001214-125L00-PROD	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor 125W Peak
MAGX-001214-250L00	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor 250W

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