Datasheet > MAGX-000912-SB3PPR

MAGX-000912-SB3PPR

更新时间： 2024-11-24 12:29:27

品牌	Logo	应用领域
泰科 - TE		晶体晶体管
页数	文件大小	规格书
6页	861K
描述
GaN on SiC Depletion-Mode Transistor Technology

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MAGX-000912-SB3PPR 数据手册

浏览型号MAGX-000912-SB3PPR的Datasheet PDF文件第2页

浏览型号MAGX-000912-SB3PPR的Datasheet PDF文件第3页

浏览型号MAGX-000912-SB3PPR的Datasheet PDF文件第4页

浏览型号MAGX-000912-SB3PPR的Datasheet PDF文件第5页

浏览型号MAGX-000912-SB3PPR的Datasheet PDF文件第6页

MAGX-000912-500L00

GaN on SiC HEMT Pulsed Power Transistor

500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty

Rev. V1

Features

 GaN on SiC Depletion-Mode Transistor

Technology

 Internally matched

 Common-Source configuration

 Broadband Class AB operation

 RoHS* Compliant and 260°C Reflow Compatible

 +50V Typical Operation



MTTF = 600 years (T_J< 200°C)

Applications

Ordering Information

 Civilian Air Traffic Control (ATC), L-Band

secondary radar for IFF and Mode-S avionics.

Part Number

Description

 Military radar for IFF and Data Links.

500 W GaN Power Transistor

(Production)

MAGX-000912-500L00

MAGX-000912-SB3PPR

Description

960 - 1215 MHz Evaluation

Board

The MAGX-000912-500L00 is a gold metalized

matched Gallium Nitride (GaN) on Silicon

Carbide (SiC) RF power transistor optimized for

pulsed avionics and radar applications. Using state

of the art wafer fabrication processes, these high

performance transistors provide high gain,

efficiency, bandwidth, and ruggedness over a wide

bandwidth for today’s demanding application needs.

High breakdown voltages allow for reliable and

stable operation under more extreme

mismatch

load conditions compared with older semiconductor

technologies.

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

12 3 4 5 6

中文翻译

下载PDF

与MAGX-000912-SB3PPR相关器件

型号	品牌	获取价格	描述	数据表
MAGX-001090-600L00	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
MAGX-001090-600L0S	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-001090-600L0X	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-001090-SB0PPR	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
MAGX-001214-125L00	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor 125W
MAGX-001214-125L00-PROD	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor 125W Peak
MAGX-001214-250L00	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor 250W
MAGX-001214-250L00-PROD	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-001214-500L00	TE	获取价格	GaN on SiC Depletion-Mode Transistor Technology Internally Matched
MAGX-001214-500L00_15	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor