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MAGX-000912-SB3PPR PDF预览

MAGX-000912-SB3PPR

更新时间: 2024-11-05 12:29:27
品牌 Logo 应用领域
泰科 - TE 晶体晶体管
页数 文件大小 规格书
6页 861K
描述
GaN on SiC Depletion-Mode Transistor Technology

MAGX-000912-SB3PPR 数据手册

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MAGX-000912-500L00  
GaN on SiC HEMT Pulsed Power Transistor  
500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty  
Rev. V1  
Features  
GaN on SiC Depletion-Mode Transistor  
Technology  
Internally matched  
Common-Source configuration  
Broadband Class AB operation  
RoHS* Compliant and 260°C Reflow Compatible  
+50V Typical Operation  
MTTF = 600 years (TJ < 200°C)  
Applications  
Ordering Information  
Civilian Air Traffic Control (ATC), L-Band  
secondary radar for IFF and Mode-S avionics.  
Part Number  
Description  
Military radar for IFF and Data Links.  
500 W GaN Power Transistor  
(Production)  
MAGX-000912-500L00  
MAGX-000912-SB3PPR  
Description  
960 - 1215 MHz Evaluation  
Board  
The MAGX-000912-500L00 is a gold metalized  
matched Gallium Nitride (GaN) on Silicon  
Carbide (SiC) RF power transistor optimized for  
pulsed avionics and radar applications. Using state  
of the art wafer fabrication processes, these high  
performance transistors provide high gain,  
efficiency, bandwidth, and ruggedness over a wide  
bandwidth for today’s demanding application needs.  
High breakdown voltages allow for reliable and  
stable operation under more extreme  
mismatch  
load conditions compared with older semiconductor  
technologies.  
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  

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