Datasheet > MAGX-001090-600L00

MAGX-001090-600L00

更新时间： 2024-11-24 12:29:27

品牌	Logo	应用领域
泰科 - TE		晶体晶体管脉冲
页数	文件大小	规格书
7页	971K
描述
GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration

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MAGX-001090-600L00

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V1

Features



GaN on SiC Depletion-Mode Transistor

Technology



Internally Matched

Common-Source Configuration

Broadband Class AB Operation

RoHS* Compliant and 260°C Reflow Compatible

+50 V Typical Operation

MTTF = 600 years (T_J< 200°C)

Applications

Ordering Information

 Civilian Air Traffic Control (ATC), L-Band

secondary radar for IFF and Mode-S avionics.

Part Number

Description

 Military radar for IFF and Data Links.

600 W GaN Power

Transistor (Production)

MAGX-001090-600L00

MAGX-001090-SB0PPR

Description

1.03 - 1.09 GHz

Evaluation Board

The MAGX-001090-600L00 is a gold metalized

matched Gallium Nitride (GaN) on Silicon

Carbide (SiC) RF power transistor optimized for

pulsed avionics and radar applications. Using state

of the art wafer fabrication processes, these high

performance transistors provide high gain,

efficiency, bandwidth, and ruggedness over a wide

bandwidth for today’s demanding application needs.

High breakdown voltages allow for reliable and

stable operation under more extreme

mismatch

load conditions compared with older semiconductor

technologies.

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

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