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M68AW512DZB PDF预览

M68AW512DZB

更新时间: 2024-09-19 22:05:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器
页数 文件大小 规格书
18页 126K
描述
8 Mbit 512K x16 3.0V Asynchronous SRAM

M68AW512DZB 数据手册

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M68AW512D  
8 Mbit (512K x16) 3.0V Asynchronous SRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 2.7 to 3.6V  
Figure 1. Packages  
512K x 16 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIMES: 55, 70ns  
LOW STANDBY CURRENT  
BGA  
LOW V  
DATA RETENTION: 1.5V  
CC  
TRI-STATE COMMON I/O  
TFBGA48 (ZB)  
8 x 10 mm  
AUTOMATIC POWER DOWN  
November 2002  
1/18  

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512KX16 STANDARD SRAM, 55ns, PDSO44, PLASTIC, TSOP2-44