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M68AW256D70ZB6T PDF预览

M68AW256D70ZB6T

更新时间: 2024-11-09 08:52:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
19页 111K
描述
256KX16 STANDARD SRAM, 70ns, PBGA48, 0.75 MM PITCH, TFBGA-48

M68AW256D70ZB6T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:0.75 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.83最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e1长度:8 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
电源:3/3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00002 A
最小待机电流:1 V子类别:SRAMs
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM宽度:7 mm
Base Number Matches:1

M68AW256D70ZB6T 数据手册

 浏览型号M68AW256D70ZB6T的Datasheet PDF文件第2页浏览型号M68AW256D70ZB6T的Datasheet PDF文件第3页浏览型号M68AW256D70ZB6T的Datasheet PDF文件第4页浏览型号M68AW256D70ZB6T的Datasheet PDF文件第5页浏览型号M68AW256D70ZB6T的Datasheet PDF文件第6页浏览型号M68AW256D70ZB6T的Datasheet PDF文件第7页 
M68AW256D  
M68AW256DL  
4 Mbit (256K x16) 3.0V Asynchronous SRAM  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 2.7 to 3.6V  
Figure 1. Packages  
256K x 16 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIME: 55ns  
LOW STANDBY CURRENT  
44  
LOW V DATA RETENTION: 1.0V  
CC  
1
TRI-STATE COMMON I/O  
AUTOMATIC POWER DOWN  
TSOP44 Type II (ND)  
DUAL CHIP ENABLE for EASY DEPTH  
EXPANSION  
BGA  
TFBGA48 (ZB)  
6 x 8 ball array  
October 2001  
1/19  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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