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M68AW128ML55ND6 PDF预览

M68AW128ML55ND6

更新时间: 2024-09-18 22:18:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器
页数 文件大小 规格书
22页 338K
描述
2 Mbit (128K x16) 3.0V Asynchronous SRAM

M68AW128ML55ND6 数据手册

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M68AW128M  
2 Mbit (128K x16) 3.0V Asynchronous SRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 2.7 to 3.6V  
Figure 1. Packages  
128K x 16 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIME: 55ns  
SINGLE BYTE READ/WRITE  
44  
LOW STANDBY CURRENT  
LOW V DATA RETENTION: 1.5V  
CC  
1
TRI-STATE COMMON I/O  
AUTOMATIC POWER DOWN  
PACKAGES  
TSOP44 Type II (ND)  
Compliant with Lead-Free Soldering  
Processes  
Lead-Free Versions  
BGA  
TFBGA48 (ZB)  
6 x 8mm  
September 2004  
1/22  

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