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M5M5V416BWG-10H PDF预览

M5M5V416BWG-10H

更新时间： 2024-11-10 22:14:15
品牌 Logo 应用领域
三菱 - MITSUBISHI 存储内存集成电路静态存储器
页数 文件大小 规格书
10页 108K
描述
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

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M5M5V416BWG-10H 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：TFBGA, BGA48,6X8,30
针数：48Reach Compliance Code：unknown
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.85Is Samacsys：N
最长访问时间：100 nsI/O 类型：COMMON
JESD-30 代码：R-PBGA-B48JESD-609代码：e0
长度：8.5 mm内存密度：4194304 bit
内存集成电路类型：STANDARD SRAM内存宽度：16
功能数量：1端子数量：48
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：256KX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装等效代码：BGA48,6X8,30
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3/3.3 V认证状态：Not Qualified
座面最大高度：1.06 mm最小待机电流：2 V
子类别：SRAMs最大压摆率：0.05 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：7 mm
Base Number Matches：1

M5M5V416BWG-10H 数据手册

 浏览型号M5M5V416BWG-10H的Datasheet PDF文件第2页浏览型号M5M5V416BWG-10H的Datasheet PDF文件第3页浏览型号M5M5V416BWG-10H的Datasheet PDF文件第4页浏览型号M5M5V416BWG-10H的Datasheet PDF文件第5页浏览型号M5M5V416BWG-10H的Datasheet PDF文件第6页浏览型号M5M5V416BWG-10H的Datasheet PDF文件第7页 
MITSUBISHI LSIs  
revision-W03, ' 98.12.16  
M5M5V416BWG  
PRELIMINARY  
Notice: This is not a final specification.  
Some parametric limits are subject to change  
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM  
Those are summarized in the part name table below.  
DESCRIPTION  
The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs  
organized as 262,144-words by 16-bit, f abricated by Mitsubishi's  
high-perf ormance 0.25µm CMOS technology .  
FEATURES  
Single +2.7~+3.6V power supply  
Small stand-by current: 0.3µA(3V,ty p.)  
No clocks, No ref resh  
The M5M5V416B is suitable f or memory applications where a  
simple interfacing , battery operating and battery backup are the  
important design objectiv es.  
Data retention supply v oltage =2.0V to 3.6V  
All inputs and outputs are TTL compatible.  
Easy memory expansion by S1, S2, BC1 and BC2  
Common Data I/O  
M5M5V416BWG is packaged in a CSP (chip scale package),  
with the outline of 7mm x 8.5mm, ball matrix of 6 x 8 (48pin) and  
ball pitch of 0.75mm. It giv es the best solution f or a compaction  
of mounting area as well as f lexibility of wiring pattern of printed  
circuit boards.  
Three-state outputs: OR-tie capability  
OE prev ents data contention in the I/O bus  
Process technology: 0.25µm CMOS  
Package: 48pin 7mm x 8.5mm CSP  
From the point of operating temperature, the f amily is div ided  
into three v ersions; "Standard", "W-v ersion", and "I-v ersion".  
Activ e  
Stand-by current Icc(PD), Vcc=3.0V  
ty pical * Ratings (max.)  
25°C 40°C 25°C 40°C 70°C 85°C  
Version,  
Power  
Access time  
max.  
current  
Icc1  
(3.0V, ty p.)  
Part name  
Operating  
Supply  
temperature  
70ns  
85ns  
100ns  
70ns  
85ns  
100ns  
70ns  
85ns  
100ns  
70ns  
85ns  
100ns  
70ns  
85ns  
100ns  
70ns  
85ns  
100ns  
M5M5V416BWG -70L  
M5M5V416BWG -85L  
M5M5V416BWG -10L  
M5M5V416BWG -70H  
M5M5V416BWG -85H  
M5M5V416BWG -10H  
M5M5V416BWG -70LW  
M5M5V416BWG -85LW  
M5M5V416BWG -10LW  
---  
---  
---  
--- 20µA ---  
2.7 ~ 3.6V  
Standard  
0 ~ +70°C  
0.3µA 1µA  
1µA 3µA 10µA ---  
2.7 ~ 3.6V  
2.7 ~ 3.6V  
---  
---  
---  
--- 20µA 40µA  
40mA  
(10MHz)  
5mA  
W-v ersion  
-20 ~ +85°C M5M5V416BWG -70HW  
M5M5V416BWG -85HW  
0.3µA 1µA  
1µA 3µA 10µA 20µA  
2.7 ~ 3.6V  
2.7 ~ 3.6V  
2.7 ~ 3.6V  
M5M5V416BWG -10HW  
M5M5V416WG -70LI  
M5M5V416BWG -85LI  
(1MHz)  
---  
---  
---  
--- 20µA 40µA  
I-v ersion  
M5M5V416BWG -10LI  
-40 ~ +85°CM5M5V416BWG -70HI  
M5M5V416BWG -85HI  
0.3µA 1µA  
1µA 3µA 10µA 20µA  
M5M5V416BWG -10HI  
* "ty pical" parameter is sampled, not 100% tested.  
PIN CONFIGURATION  
(TOP VIEW)  
1
2
3
4
5
6
A0  
A2  
A
BC1  
OE  
A1  
S2  
Pin  
Function  
DQ9  
A3  
A5  
A4  
A6  
BC2  
S1  
DQ1  
DQ3  
B
C
D
E
A0 ~ A17 Address input  
DQ1 ~ DQ16  
Data input / output  
Chip select input 1  
Chip select input 2  
Write control input  
Output enable input  
Lower By te (DQ1 ~ 8)  
Upper By te (DQ9 ~ 16)  
Power supply  
DQ11  
DQ2  
DQ10  
S1  
S2  
GND DQ12 A17  
A7  
DQ4  
DQ5  
VCC  
GND  
W
DQ13 GND  
A16  
VCC  
OE  
BC1  
BC2  
Vcc  
GND  
DQ15 DQ14  
A14  
A12  
A9  
A15  
A13  
A10  
DQ6  
W
DQ7  
F
G
H
DQ16  
N.C.  
N.C.  
A8  
DQ8  
N.C.  
Ground supply  
Outline: 48FHA  
NC: No Connection  
A11  
1
MITSUBISHI ELECTRIC  
1234567...10

中文翻译

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与M5M5V416BWG-10H相关器件

型号 品牌 获取价格 描述 数据表
M5M5V416BWG-10HI MITSUBISHI

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 		4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-10HW MITSUBISHI

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 		4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-10L MITSUBISHI

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 		4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-10LI MITSUBISHI

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 		4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-10LW MITSUBISHI

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 		4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70H MITSUBISHI

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 		4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70HI MITSUBISHI

获取价格

 		4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70HW MITSUBISHI

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 		4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70L MITSUBISHI

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 		4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
M5M5V416BWG-70LI MITSUBISHI

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 		Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 7 X 8.50 MM, 0.75 MM PITCH, CSP-48

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