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M39P0R9070E0ZADE PDF预览

M39P0R9070E0ZADE

更新时间： 2024-09-17 20:27:19
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路
页数 文件大小 规格书
23页 234K
描述
Memory Circuit, 32MX16, CMOS, PBGA105, 9 X 11 MM, 0.80 MM PITCH, ROHS COMPLIANT, FBGA-105

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M39P0R9070E0ZADE 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：TFBGA,针数：105
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.16Is Samacsys：N
其他特性：SYNCHRONOUS BURST MODE ALSO POSSIBLEJESD-30 代码：R-PBGA-B105
长度：11 mm内存密度：536870912 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：16
功能数量：1端子数量：105
字数：33554432 words字数代码：32000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-25 °C组织：32MX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40宽度：9 mm
Base Number Matches：1

M39P0R9070E0ZADE 数据手册

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M39P0R9070E0  
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory  
128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package  
Feature summary  
■ Multi-Chip Package  
FBGA  
– 1die of 512 Mbit (32Mb x 16, Multiple Bank,  
Multi-Level, Burst) Flash memory  
– 1 die of 128 Mbit (4 Banks of 2Mb x16) Low  
Power Synchronous Dynamic RAM  
■ Supply voltage  
TFBGA105 (ZAD)  
9 x 11mm  
– V  
– V  
= V  
= V  
= 1.7 to 1.95V  
DDQ  
DDF  
PPF  
CCP  
= 9V for fast program  
■ Security  
– 64-bit unique device number  
■ Electronic signature  
– Manufacturer Code: 20h  
– Device Code: 8819  
– 2112-bit user programmable OTP Cells  
■ Block locking  
■ Package  
– All Blocks locked at power-up  
– ECOPACK® (RoHS compliant)  
– Any combination of Blocks can be locked  
with zero latency  
Flash memory  
– WP for Block Lock-Down  
F
■ Synchronous / asynchronous read  
– Absolute Write Protection with V  
= V  
SS  
PPF  
– Synchronous Burst Read mode:  
108MHz, 66MHz  
LPSDRAM  
– Asynchronous Page Read mode  
■ 128Mbit synchronous dynamic RAM  
– Random Access: 96ns  
– Organized as 4 Banks of 2 MWords, each  
16 bits wide  
■ Programming time  
– 4.2µs typical Word program time using  
Buffer Enhanced Factory Program  
command  
■ Synchronous burst read and write  
– Fixed Burst Lengths: 1, 2, 4, 8 words or Full  
Page  
■ Memory organization  
– Burst Types: Sequential and Interleaved.  
– Maximum Clock Frequency: 104MHz  
– CAS Latency 2, 3  
– Multiple Bank Memory Array: 64 Mbit  
Banks  
– Four Extended Flash Array (EFA) Blocks of  
64 Kbits  
■ Automatic precharge  
■ Low power features:  
■ Dual operations  
– PASR (Partial Array Self Refresh),  
– program/erase in one Bank while read in  
others  
– Automatic TCSR (Temperature  
Compensated Self Refresh)  
– No delay between read and write  
operations  
– Driver Strength (DS)  
– Deep Power-Down Mode  
■ 100,000 program/erase cycles per block  
■ Common Flash Interface (CFI)  
■ Auto Refresh and Self Refresh  
April 2006  
Rev 2  
1/23  
www.st.com  
1
1234567...23

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1
M39P0R9080E0ZADE NUMONYX

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1
M39P0R9080E0ZADF NUMONYX

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1
M39P0R9080E4 NUMONYX

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