M39P0R9080E0

更新时间： 2024-11-07 03:52:43

品牌	Logo	应用领域
恒忆 - NUMONYX		动态存储器
页数	文件大小	规格书
23页	465K
描述
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

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M39P0R9080E0 数据手册

M39P0R9080E0

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory

256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

Feature summary

■ Multi-Chip Package

– 1 die of 512 Mbit (32Mb x 16, Multiple

FBGA

Bank, Multi-Level, Burst) Flash memory

– 1 die of 256 Mbit (4 Banks of 4Mb x16) Low

Power Synchronous Dynamic RAM

TFBGA105 (ZAD)

■ Supply voltage

9 x 11mm

– V

= V

= 1.7 to 1.95V

DDQ

DDF

PPF

CCP

= 9V for fast program

■ 100,000 program/erase cycles per block

■ Electronic signature

– Manufacturer Code: 20h

– Device Code: 8819

■ Block locking

– All Blocks locked at power-up

– Any combination of Blocks can be locked

with zero latency

■ ECOPACK® package available

– WP for Block Lock-Down

– Absolute Write Protection with V

Flash memory

= V

PPF

■ Synchronous / asynchronous read

■ Common Flash Interface (CFI)

– Synchronous Burst Read mode:

108MHz, 66MHz

LPSDRAM

– Asynchronous Page Read mode

■ 256 Mbit synchronous dynamic RAM

– Random Access: 96ns

– Organized as 4 Banks of 4 MWords, each

16 bits wide

■ Programming time

– 4.2µs typical Word program time using

Buffer Enhanced Factory Program

command

■ Synchronous burst read and write

– Fixed Burst Lengths: 1, 2, 4, 8 words or Full

Page

■ Memory organization

– Burst Types: Sequential and Interleaved.

– Multiple Bank Memory Array: 64 Mbit

Banks

– Clock Frequency: 133 MHz (7.5ns speed

class)

– Four Extended Flash Array (EFA) Blocks of

64 Kbits

– Clock Valid to Output Delay (CAS Latency):

3 at 133 MHz

■ Dual operations

■ Automatic and controlled precharge

– program/erase in one Bank while read in

others

– No delay between read and write

operations

■ Low-power features:

– Partial Array Self Refresh (PASR),

– Automatic Temperature Compensated Self

Refresh (TCSR)

■ Security

– Driver Strength (DS)

– 64-bit unique device number

– 2112-bit user programmable OTP Cells

– Deep Power-Down Mode

■ Auto Refresh and Self Refresh

November 2007

Rev 2

1/23

www.numonyx.com

12 3 4 5 6 7...23

中文翻译

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与M39P0R9080E0相关器件

型号	品牌	获取价格	描述	数据表
M39P0R9080E0ZAD	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1
M39P0R9080E0ZADE	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1
M39P0R9080E0ZADF	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1
M39P0R9080E4	NUMONYX	获取价格	512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDR
M39P0R9080E4ZASE	NUMONYX	获取价格	512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDR
M39P0R9080E4ZASF	NUMONYX	获取价格	512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDR
M3A	SUNMATE	获取价格	1.0A patch rectifier diode 200V SMA series
M3A	HY	获取价格	SURFACE MOUNT PLASTIC SILICON RECTIFIERS
M3A	MTRONPTI	获取价格	8 pin DIP, 5.0 or 3.3 Volt, ACMOS/TTL, Clock Oscillators
M3A_0611	MTRONPTI	获取价格	8 pin DIP, 5.0 or 3.3 Volt, ACMOS/TTL, Clock Oscillators

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