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M39P0R9080E0ZADF PDF预览

M39P0R9080E0ZADF

更新时间: 2024-09-17 03:32:03
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路动态存储器
页数 文件大小 规格书
23页 465K
描述
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

M39P0R9080E0ZADF 数据手册

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M39P0R9080E0  
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory  
256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package  
Feature summary  
Multi-Chip Package  
– 1 die of 512 Mbit (32Mb x 16, Multiple  
FBGA  
Bank, Multi-Level, Burst) Flash memory  
– 1 die of 256 Mbit (4 Banks of 4Mb x16) Low  
Power Synchronous Dynamic RAM  
TFBGA105 (ZAD)  
Supply voltage  
9 x 11mm  
– V  
– V  
= V  
= V  
= 1.7 to 1.95V  
DDQ  
DDF  
PPF  
CCP  
= 9V for fast program  
100,000 program/erase cycles per block  
Electronic signature  
– Manufacturer Code: 20h  
– Device Code: 8819  
Block locking  
– All Blocks locked at power-up  
– Any combination of Blocks can be locked  
with zero latency  
ECOPACK® package available  
– WP for Block Lock-Down  
– Absolute Write Protection with V  
F
Flash memory  
= V  
SS  
PPF  
Synchronous / asynchronous read  
Common Flash Interface (CFI)  
– Synchronous Burst Read mode:  
108MHz, 66MHz  
LPSDRAM  
– Asynchronous Page Read mode  
256 Mbit synchronous dynamic RAM  
– Random Access: 96ns  
– Organized as 4 Banks of 4 MWords, each  
16 bits wide  
Programming time  
– 4.2µs typical Word program time using  
Buffer Enhanced Factory Program  
command  
Synchronous burst read and write  
– Fixed Burst Lengths: 1, 2, 4, 8 words or Full  
Page  
Memory organization  
– Burst Types: Sequential and Interleaved.  
– Multiple Bank Memory Array: 64 Mbit  
Banks  
– Clock Frequency: 133 MHz (7.5ns speed  
class)  
– Four Extended Flash Array (EFA) Blocks of  
64 Kbits  
– Clock Valid to Output Delay (CAS Latency):  
3 at 133 MHz  
Dual operations  
Automatic and controlled precharge  
– program/erase in one Bank while read in  
others  
– No delay between read and write  
operations  
Low-power features:  
– Partial Array Self Refresh (PASR),  
– Automatic Temperature Compensated Self  
Refresh (TCSR)  
Security  
– Driver Strength (DS)  
– 64-bit unique device number  
– 2112-bit user programmable OTP Cells  
– Deep Power-Down Mode  
Auto Refresh and Self Refresh  
November 2007  
Rev 2  
1/23  
www.numonyx.com  
1

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