M39P0R9080E4

更新时间： 2024-09-17 03:52:43

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存动态存储器
页数	文件大小	规格书
23页	467K
描述
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package

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M39P0R9080E4 数据手册

M39P0R9080E4

M39P0R1080E4

512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory

256 Mbit low power SDRAM, 1.8 V supply, multichip package

Features

■ Multichip package

FBGA

– 1 die of 512 Mbit (32 Mb ×16) or 1 Gbit (64

Mb ×16) multiple bank, multilevel, burst)

Flash memory

– 1 die of 256 Mbit (4 banks of 4 Mb x16) low

TFBGA165 (ZAS)

power synchronous dynamic RAM

9 x 11 mm

■ Supply voltage

– V

= V

= 1.7 to 1.95 V

DDQ

DDF

PPF

CCP

■ Block locking

= 9 V for fast program

– All blocks locked at power-up

■ Electronic signature

– Any combination of blocks can be locked

with zero latency

– Manufacturer code: 20h

– 512 Mbit device code: 8819

– 1 Gbit device code: 880F

– WP for block lock-down

– Absolute write protection with V

= V

PPF

■ ECOPACK® packages available

■ Security

– 64-bit unique device number

Flash memory

– 2112-bit user programmable OTP cells

■ Synchronous/asynchronous read

■ CFI (Common Flash Interface)

– Synchronous Burst Read mode:

108 MHz, 66 MHz

– Asynchronous Page Read mode

– Random access: 96 ns

LPSDRAM

■ 256 Mbit synchronous dynamic RAM

– Organized as 4 banks of 4 Mwords, each

16 bits wide

■ Programming time

– 4.2 µs typical word program time using

Buffer Enhanced Factory Program

command

■ Synchronous burst read and write

– Fixed burst lengths: 1, 2, 4, 8 words or full

page

– Burst types: sequential and interleaved

– Clock frequency: 133 MHz (7.5 ns speed)

– CAS latency 3 at 133 MHz

■ Memory organization

– Multiple bank memory array:

64 Mbit banks (512 Mb devices)

128 Mbit banks (1Gb devices)

■ Automatic and controlled precharge

– Four EFA (extended flash array) blocks of

64 Kbits

■ Low power features:

■ Dual operations

– PASR (partial array self refresh),

– program/erase in one bank while read in

others

– TCSR (automatic temperature

compensated self refresh)

– No delay between read and write

operations

– DS (driver strength)

– Deep Power-Down mode

■ 100,000 program/erase cycles per block

■ Auto refresh and self refresh

November 2007

Rev 2

1/23

www.numonyx.com

12 3 4 5 6 7...23

中文翻译

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与M39P0R9080E4相关器件

型号	品牌	获取价格	描述	数据表
M39P0R9080E4ZASE	NUMONYX	获取价格	512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDR
M39P0R9080E4ZASF	NUMONYX	获取价格	512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDR
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M3A_0611	MTRONPTI	获取价格	8 pin DIP, 5.0 or 3.3 Volt, ACMOS/TTL, Clock Oscillators
M3A_07	MTRONPTI	获取价格	8 pin DIP, 5.0 or 3.3 Volt, ACMOS/TTL, Clock Oscillators
M3A1	ETC	获取价格	MEDIUM CURRENT SILICON RECTIFIERS
M3A103020M00	VISHAY	获取价格	Tantalum Capacitor, Polarized, Tantalum, 20V, 20% +Tol, 20% -Tol, 0.01uF
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