是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.79 | 其他特性: | TRISTATE FUNCTION |
最长下降时间: | 4 ns | 频率调整-机械: | NO |
频率稳定性: | 20% | 安装特点: | SURFACE MOUNT |
最大工作频率: | 175 MHz | 最小工作频率: | 0.032768 MHz |
最高工作温度: | 70 °C | 最低工作温度: | |
振荡器类型: | HCMOS/TTL | 输出负载: | 15 pF |
物理尺寸: | 20.32mm x 13.21mm x 5.08mm | 最长上升时间: | 4 ns |
最大供电电压: | 5.5 V | 最小供电电压: | 4.5 V |
标称供电电压: | 5 V | 表面贴装: | YES |
最大对称度: | 45/55 % | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M3999-175M | CTS |
获取价格 |
Oscillator, | |
M3999-FREQ | CTS |
获取价格 |
HCMOS/TTL Output Clock Oscillator, 0.032768MHz Min, 175MHz Max, DIP-4 | |
M39C12/19-0502 | WINCHESTER |
获取价格 |
RF BNC Connector, Female, Panel Mount, Cable Mount, Crimp Terminal, Jack | |
M39P0R1080E4 | NUMONYX |
获取价格 |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDR | |
M39P0R1080E4ZASE | NUMONYX |
获取价格 |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDR | |
M39P0R1080E4ZASF | NUMONYX |
获取价格 |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDR | |
M39P0R8070E2 | NUMONYX |
获取价格 |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SD | |
M39P0R8070E2ZADE | NUMONYX |
获取价格 |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SD | |
M39P0R8070E2ZADF | NUMONYX |
获取价格 |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SD | |
M39P0R9070E0 | STMICROELECTRONICS |
获取价格 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1 |