M39P0R8070E2

更新时间： 2024-09-17 04:18:43

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存动态存储器
页数	文件大小	规格书
24页	479K
描述
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

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中文翻译

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数据手册

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M39P0R8070E2 数据手册

M39P0R8070E2

M39P0R9070E2

256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory

128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

Feature summary

■ Multi-Chip Package

– 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb

FBGA

x 16, Multiple Bank, Multi-Level, Burst)

Flash memory

– 1 die of 128 Mbit (4 Banks of 2Mb x16) Low

Power Synchronous Dynamic RAM

TFBGA105 (ZAD)

9 x 11mm

■ Supply voltage

– V

= V

= 1.7 to 1.95V

DDQ

DDF

PPF

DDS

= 9V for fast program

■ 100,000 program/erase cycles per block

■ Electronic signature

■ Security

– Manufacturer Code: 20h

– 256 Mbit Device Code: 8818

– 512 Mbit Device Code: 8819

– 64-bit unique device number

– 2112-bit user programmable OTP Cells

■ Block locking

■ Package

– All Blocks locked at power-up

– Any combination of Blocks can be locked

with zero latency

– ECOPACK® (RoHS compliant)

Flash memory

– WP for Block Lock-Down

– Absolute Write Protection with V

■ Synchronous / Asynchronous Read

= V

PPF

– Synchronous Burst Read mode:

108MHz, 66MHz

■ Common Flash Interface (CFI)

– Asynchronous Page Read mode

– Random Access: 96ns

LPSDRAM

■ 128 Mbit Synchronous Dynamic RAM

■ Programming time

– Organized as 4 Banks of 2 MWords, each

16 bits wide

– 4.2µs typical Word program time using

Buffer Enhanced Factory Program

command

■ Synchronous Burst Read and Write

– Fixed burst lengths: 1, 2, 4, 8 Words or Full

Page

■ Memory organization

– Burst Types: Sequential and Interleaved

– Maximum Clock frequency: 104MHz

– Multiple Bank memory array: 32 Mbit

Banks (256Mb devices); 64 Mbit Banks

(512Mb devices)

■ Automatic and controlled Precharge

– Four Extended Flash Array (EFA) Blocks of

64 Kbits

■ Low power features:

– Partial Array Self Refresh (PASR)

– Automatic Temperature Compensated Self

Refresh (TCSR)

■ Dual operations

– program/erase in one Bank while read in

others

– Driver Strength (DS)

– No delay between read and write

operations

– Deep Power-Down Mode

■ Auto Refresh and Self Refresh

November 2007

Rev 2

1/24

www.numonyx.com

12 3 4 5 6 7...24

中文翻译

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与M39P0R8070E2相关器件

型号	品牌	获取价格	描述	数据表
M39P0R8070E2ZADE	NUMONYX	获取价格	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SD
M39P0R8070E2ZADF	NUMONYX	获取价格	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SD
M39P0R9070E0	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1
M39P0R9070E0ZAD	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1
M39P0R9070E0ZAD	NUMONYX	获取价格	Memory Circuit, 32MX16, CMOS, PBGA105, 9 X 11 MM, 0.80 MM PITCH, FBGA-105
M39P0R9070E0ZADE	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1
M39P0R9070E0ZADE	NUMONYX	获取价格	Memory Circuit, 32MX16, CMOS, PBGA105, 9 X 11 MM, 0.80 MM PITCH, ROHS COMPLIANT, FBGA-105
M39P0R9070E0ZADF	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1
M39P0R9070E0ZADF	NUMONYX	获取价格	Memory Circuit, 32MX16, CMOS, PBGA105, 9 X 11 MM, 0.80 MM PITCH, ROHS COMPLIANT, FBGA-105
M39P0R9070E2	NUMONYX	获取价格	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SD

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