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M36W832BE100ZA6 PDF预览

M36W832BE100ZA6

更新时间: 2024-11-21 04:50:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
59页 350K
描述
Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66

M36W832BE100ZA6 数据手册

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M36W832TE  
M36W832BE  
32 Mbit (2Mb x16, Boot Block) Flash Memory  
and 8 Mbit (512K x16) SRAM, Multiple Memory Product  
PRODUCT PREVIEW  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
SRAM  
8 Mbit (512K x 16 bit)  
ACCESS TIME: 70ns  
– V  
– V  
– V  
= 2.7V to 3.3V  
DDF  
DDS  
PPF  
= V  
= 2.7V to 3.3V  
DDQF  
LOW V  
DATA RETENTION: 1.5V  
= 12V for Fast Program (optional)  
DDS  
POWER DOWN FEATURES USING TWO  
ACCESS TIME: 85,100ns  
CHIP ENABLE INPUTS  
LOW POWER CONSUMPTION  
ELECTRONIC SIGNATURE  
Figure 1. Packages  
– Manufacturer Code: 20h  
– Top Device Code, M36W832TE: 88BAh  
– Bottom Device Code, M36W832BE: 88BBh  
FLASH MEMORY  
32 Mbit (2Mb x16) BOOT BLOCK  
FBGA  
– 8 x 4 KWord Parameter Blocks (Top or  
Bottom Location)  
PROGRAMMING TIME  
– 10µs typical  
Stacked LFBGA66 (ZA)  
8 x 8 ball array  
– Double Word Programming Option  
BLOCK LOCKING  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WPF for Block Lock-Down  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
SECURITY  
– 64 bit user programmable OTP cells  
– 64 bit unique device identifier  
– One parameter block permanently lockable  
July 2002  
1/59  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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