M36W0R6050T1ZAQE

更新时间： 2024-11-19 03:09:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存静态存储器
页数	文件大小	规格书
22页	221K
描述
64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

M36W0R6050T1ZAQE 数据手册

M36W0R6050T1

M36W0R6050B1

64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory

and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package

Features

■ Multi-Chip Package

– 1 die of 64 Mbit (4 Mb × 16) Flash memory

– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM

FBGA

■ Supply voltage

– V

= V

= 1.7 V to 1.95 V

DDQF

DDF

DDP

Stacked TFBGA88

(ZA)

■ Low power consumption

■ Electronic signature

– Manufacturer Code: 20h

– Device code (top flash configuration),

M36W0R6050T1: 8810h

■ Block locking

– Device code (bottom flash configuration),

M36W0R6050B1: 8811h

– All blocks locked at Power-up

– Any combination of blocks can be locked

■ Package

– WP for Block Lock-Down

– ECOPACK®

■ Security

– 128-bit user programmable OTP cells

– 64-bit unique device number

Flash memory

■ Programming time

■ Common Flash Interface (CFI)

– 8 µs by Word typical for Fast Factory

Program

■ 100 000 program/erase cycles per block

– Double/Quadruple Word Program option

– Enhanced Factory Program options

PSRAM

■ Access time: 70 ns

■ Memory blocks

■ Asynchronous Page Read

– Page size: 8 words

– Multiple Bank memory array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

– First access within page: 70 ns

– Subsequent read within page: 20 ns

■ Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 66 MHz

■ Three Power-down modes

– Deep Power-Down

– Asynchronous/ Synchronous Page Read

mode

– Random Access: 70 ns

– Partial Array Refresh of 4 Mbits

– Partial Array Refresh of 8 Mbits

■ Dual operations

– Program Erase in one Bank while Read in

others

– No delay between Read and Write

operations

January 2007

1/22

www.st.com

12 3 4 5 6 7...22

中文翻译

下载PDF

与M36W0R6050T1ZAQE相关器件

型号	品牌	获取价格	描述	数据表
M36W0R6050T1ZAQF	STMICROELECTRONICS	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050T1ZAQF	NUMONYX	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050T3	NUMONYX	获取价格	64-Mbit (4 Mbits 】16, multiple bank, burst) F
M36W0R6050T3ZAQE	NUMONYX	获取价格	64-Mbit (4 Mbits 】16, multiple bank, burst) F
M36W0R6050T3ZAQF	NUMONYX	获取价格	64-Mbit (4 Mbits 】16, multiple bank, burst) F
M36W0R6050U4ZAME	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT
M36W0R6050U4ZSE	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA56, 8 X 6 MM, 1.20 MM HEIGHT, 0.50 MM PITCH,
M36W0R6050U4ZSF	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA56, 8 X 6 MM, 1.20 MM HEIGHT, 0.50 MM PITCH,
M36W0R7050B0ZAQE	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36W0R7050B0ZAQF	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88

与M36W0R6050T1ZAQE相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

22
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

14
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

44
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

43

产品中心

服务支持

精选活动

关于我们

帮助中心

M36W0R6050T1ZAQE

M36W0R6050T1ZAQE 数据手册

与M36W0R6050T1ZAQE相关器件

与M36W0R6050T1ZAQE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

M36W0R6050T1ZAQE

M36W0R6050T1ZAQE 数据手册

与M36W0R6050T1ZAQE相关器件

与M36W0R6050T1ZAQE相关文章

您还可以找

您在本页遇到什么问题？