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M36W0R7050B0ZAQF PDF预览

M36W0R7050B0ZAQF

更新时间: 2024-01-12 06:04:00
品牌 Logo 应用领域
恒忆 - NUMONYX 静态存储器内存集成电路
页数 文件大小 规格书
18页 359K
描述
Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88

M36W0R7050B0ZAQF 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:88
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.12Is Samacsys:N
其他特性:PSRAM IS ORGANIZED AS 2M X 16JESD-30 代码:R-PBGA-B88
JESD-609代码:e1长度:10 mm
内存密度:134217728 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16功能数量:1
端子数量:88字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-30 °C
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

M36W0R7050B0ZAQF 数据手册

 浏览型号M36W0R7050B0ZAQF的Datasheet PDF文件第2页浏览型号M36W0R7050B0ZAQF的Datasheet PDF文件第3页浏览型号M36W0R7050B0ZAQF的Datasheet PDF文件第4页浏览型号M36W0R7050B0ZAQF的Datasheet PDF文件第5页浏览型号M36W0R7050B0ZAQF的Datasheet PDF文件第6页浏览型号M36W0R7050B0ZAQF的Datasheet PDF文件第7页 
M36W0R7050T0  
M36W0R7050B0  
128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory and  
32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package  
FEATURES SUMMARY  
MULTI-CHIP PACKAGE  
Figure 1. Package  
1 die of 128 Mbit (8Mb x16, Multiple Bank,  
Burst) Flash Memory  
1 die of 32 Mbit (2Mb x16) Pseudo SRAM  
SUPPLY VOLTAGE  
VDDF = VDDP = VDDQ = 1.7 to 1.95V  
VPPF = 12V for Fast Program (optional)  
FBGA  
ELECTRONIC SIGNATURE  
Manufacturer Code: 20h  
Device Code (Top Flash Configuration)  
M36W0R7050T0: 881Eh  
TFBGA88 (ZAQ)  
8 x 10mm  
Device Code (Bottom Flash  
Configuration) M36W0R7050B0: 881Fh  
PACKAGE  
Compliant with Lead-Free Soldering  
Processes  
SECURITY  
Lead-Free Versions  
64 bit unique device number  
128 bit user programmable OTP Cells  
FLASH MEMORY  
SYNCHRONOUS / ASYNCHRONOUS READ  
BLOCK LOCKING  
Synchronous Burst Read mode: 54MHz  
Asynchronous/ Synchronous Page Read  
mode  
All blocks locked at power-up  
Any combination of blocks can be locked  
WPF for Block Lock-Down  
Random Access: 70ns  
SYNCHRONOUS BURST READ SUSPEND  
PROGRAMMING TIME  
COMMON FLASH INTERFACE (CFI)  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
8µs by Word typical for Fast Factory  
Program  
PSRAM  
Double/Quadruple Word Program option  
Enhanced Factory Program options  
ACCESS TIME: 85ns  
LOW STANDBY CURRENT: 100µA  
DEEP POWER-DOWN CURRENT: 10µA  
BYTE CONTROL: UBP/LBP  
PROGRAMMABLE PARTIAL ARRAY  
8 WORD PAGE ACCESS CAPABILITY: 25ns  
PARTIAL POWER-DOWN MODES  
MEMORY ORGANIZATION  
Multiple Bank Memory Array: 4 Mbit  
Banks  
Parameter Blocks (Top or Bottom  
location)  
DUAL OPERATIONS  
Deep Power-Down  
program/erase in one Bank while read in  
others  
No delay between read and write  
operations  
4 Mbit Partial Power-Down  
8 Mbit Partial Power-Down  
16 Mbit Partial Power-Down  
December 2004  
1/18  

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