Datasheet > M36W0T7050T0ZAQ

M36W0T7050T0ZAQ

更新时间： 2023-02-26 14:53:45

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	443K
描述
SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88

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中文翻译

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数据手册

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M36W0T7050T0ZAQ 数据手册

M36W0T7050T0

M36W0T7050B0

128Mbit (Multiple Bank, 8Mb x 16, Burst) Flash Memory

32Mbit (2M x16) PSRAM, Dual Supply, Multi-Chip Package

FEATURES SUMMARY

■

MULTI-CHIP PACKAGE

Figure 1. Package

–

1 die of 128 Mbit (8Mb x16, Multiple Bank,

Burst) Flash Memory

–

1 die of 32 Mbit (2Mb x16) Pseudo SRAM

■

SUPPLY VOLTAGE

–

V_DDF= 1.7 to 2V

V_DDP= V_DDQ= 2.7 to 3.3V

FBGA

V_PP= 12V for fast Program (optional)

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

Device Code (Top Flash Configuration)

M36W0T7050T0: 881Eh

TFBGA88 (ZAQ)

8 x 10mm

–

Device Code (Bottom Flash

Configuration) M36W0T7050B0: 881Fh

PACKAGE

–

Compliant with Lead-Free Soldering

Processes

■

SECURITY

–

Lead-Free Versions

–

128 bit user programmable OTP cells

64 bit unique device number

FLASH MEMORY

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

BLOCK LOCKING

Synchronous Burst Read mode: 40MHz

Asynchronous/ Synchronous Page Read

mode

–

All blocks locked at power-up

Any combination of blocks can be locked

WP_Ffor Block Lock-Down

–

Random Access: 70ns

■

SYNCHRONOUS BURST READ SUSPEND

PROGRAMMING TIME

■

COMMON FLASH INTERFACE (CFI)

100,000 PROGRAM/ERASE CYCLES per

BLOCK

–

8µs by Word typical for Fast Factory

Program

PSRAM

–

Double/Quadruple Word Program option

Enhanced Factory Program options

■

ACCESS TIME: 70ns

LOW STANDBY CURRENT: 100µA

DEEP POWER DOWN CURRENT: 10µA

BYTE CONTROL: UB_P/LB_P

PROGRAMMABLE PARTIAL ARRAY

8 WORD PAGE ACCESS CAPABILITY: 18ns

POWER-DOWN MODES

■

MEMORY BLOCKS

–

Multiple Bank Memory Array: 4 Mbit

Banks

Parameter Blocks (Top or Bottom

location)

–

DUAL OPERATIONS

–

– Deep Power-Down

program/erase in one Bank while read in

others

No delay between read and write

operations

– 4 Mbit Partial Array Refresh

– 8 Mbit Partial Array Refresh

– 16 Mbit Partial Array Refresh

–

December 2004

1/18

12 3 4 5 6 7...18

中文翻译

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与M36W0T7050T0ZAQ相关器件

型号	品牌	获取价格	描述	数据表
M36W0T7050T0ZAQE	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36W0T7050T0ZAQE	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36W0T7050T0ZAQF	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36W0T7050T0ZAQF	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36W108	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108AB	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108AB100ZM1	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA48, 1 MM PITCH, LBGA-48
M36W108AB100ZM1T	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108AB100ZM5	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA48, 1 MM PITCH, LBGA-48
M36W108AB100ZM5T	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P

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