5秒后页面跳转
M36W108AB100ZN6 PDF预览

M36W108AB100ZN6

更新时间: 2023-01-02 16:17:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
36页 252K
描述
Memory Circuit, 1MX8, CMOS, PBGA48, LGA-48

M36W108AB100ZN6 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:LGA包装说明:LGA-48
针数:48Reach Compliance Code:not_compliant
HTS代码:8542.32.00.71风险等级:5.01
Is Samacsys:N最长访问时间:100 ns
其他特性:ALSO CONTAINS 128K X 8 SRAMJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:11.8 mm
内存密度:8388608 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8混合内存类型:FLASH+SRAM
功能数量:1端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:VLGA
封装等效代码:LGA48,6X8,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1 mm
子类别:Other Memory ICs最大压摆率:0.04 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BUTT端子节距:1 mm
端子位置:BOTTOM宽度:9.8 mm
Base Number Matches:1

M36W108AB100ZN6 数据手册

 浏览型号M36W108AB100ZN6的Datasheet PDF文件第2页浏览型号M36W108AB100ZN6的Datasheet PDF文件第3页浏览型号M36W108AB100ZN6的Datasheet PDF文件第4页浏览型号M36W108AB100ZN6的Datasheet PDF文件第5页浏览型号M36W108AB100ZN6的Datasheet PDF文件第6页浏览型号M36W108AB100ZN6的Datasheet PDF文件第7页 
M36W108AT  
M36W108AB  
8 Mbit (1Mb x8, Boot Block) Flash Memory and  
1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product  
PRELIMINARY DATA  
SUPPLY VOLTAGE  
– V  
= V  
= 2.7V to 3.6V: for Program,  
CCS  
CCF  
Erase and Read  
ACCESS TIME: 100ns  
LOW POWER CONSUMPTION  
– Read: 40mA max. (SRAM chip)  
– Stand-by: 30µA max. (SRAM chip)  
– Read: 10mA max. (Flash chip)  
– Stand-by: 100µA max. (Flash chip)  
BGA  
LGA  
LBGA48 (ZM)  
6 x 8 solder balls  
LGA48 (ZN)  
6 x 8 solder lands  
FLASH MEMORY  
8 Mbit (1Mb x 8) BOOT BLOCK ERASE  
PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte  
Figure 1. Logic Diagram  
– Status Register bits and Ready/Busy Output  
SECURITY PROTECTION MEMORY AREA  
INSTRUCTION ADDRESS CODING: 3 digits  
MEMORY BLOCKS  
V
V
CCF CCS  
– Boot Block (Top or Bottom location)  
– Parameter and Main Blocks  
20  
8
A0-A19  
DQ0-DQ7  
RB  
BLOCK, MULTI-BLOCK and CHIP ERASE  
ERASE SUSPEND and RESUME MODES  
W
EF  
– Read and Program another Block during  
Erase Suspend  
M36W108AT  
M36W108AB  
100,000 PROGRAM/ERASE CYCLES per  
G
BLOCK  
RP  
E1S  
E2S  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code, M36W108AT: D2h  
– Device Code, M36W108AB: DCh  
SRAM  
1 Mbit (128Kb x 8)  
V
SS  
AI02620  
POWER DOWN FEATURES USING TWO  
CHIP ENABLE INPUTS  
LOW V  
DATA RETENTION: 2V  
CC  
March 1999  
1/36  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

与M36W108AB100ZN6相关器件

型号 品牌 获取价格 描述 数据表
M36W108AB100ZN6T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108AB120ZM1 STMICROELECTRONICS

获取价格

SPECIALTY MEMORY CIRCUIT, PBGA48, 1 MM PITCH, LBGA-48
M36W108AB120ZM1T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108AB120ZM5 STMICROELECTRONICS

获取价格

Memory Circuit, 1MX8, CMOS, PBGA48, 1 MM PITCH, LBGA-48
M36W108AB120ZM5T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108AB120ZM6 STMICROELECTRONICS

获取价格

Memory Circuit, 1MX8, CMOS, PBGA48, 1 MM PITCH, LBGA-48
M36W108AB120ZM6T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108AB120ZN1 STMICROELECTRONICS

获取价格

SPECIALTY MEMORY CIRCUIT, PBGA48, LGA-48
M36W108AB120ZN1T STMICROELECTRONICS

获取价格

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108AB120ZN5 STMICROELECTRONICS

获取价格

SPECIALTY MEMORY CIRCUIT, PBGA48, LGA-48