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M36W108AB120ZM1T PDF预览

M36W108AB120ZM1T

更新时间: 2024-11-22 22:08:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存静态存储器
页数 文件大小 规格书
36页 253K
描述
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

M36W108AB120ZM1T 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BGA包装说明:1 MM PITCH, LBGA-48
针数:48Reach Compliance Code:unknown
HTS代码:8542.32.00.71风险等级:5.01
最长访问时间:120 ns其他特性:ALSO CONTAINS 128K X 8 SRAM
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:11.8 mm内存密度:8388608 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:8
混合内存类型:FLASH+SRAM功能数量:1
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:LBGA封装等效代码:BGA48,6X8,40
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
电源:3/3.3 V认证状态:Not Qualified
座面最大高度:1.35 mm子类别:Other Memory ICs
最大压摆率:0.04 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
宽度:9.8 mmBase Number Matches:1

M36W108AB120ZM1T 数据手册

 浏览型号M36W108AB120ZM1T的Datasheet PDF文件第2页浏览型号M36W108AB120ZM1T的Datasheet PDF文件第3页浏览型号M36W108AB120ZM1T的Datasheet PDF文件第4页浏览型号M36W108AB120ZM1T的Datasheet PDF文件第5页浏览型号M36W108AB120ZM1T的Datasheet PDF文件第6页浏览型号M36W108AB120ZM1T的Datasheet PDF文件第7页 
M36W108AT  
M36W108AB  
8 Mbit (1Mb x8, Boot Block) Flash Memory and  
1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product  
PRELIMINARY DATA  
SUPPLY VOLTAGE  
– V  
= V  
= 2.7V to 3.6V: for Program,  
CCS  
CCF  
Erase and Read  
ACCESS TIME: 100ns  
LOW POWER CONSUMPTION  
– Read: 40mA max. (SRAM chip)  
– Stand-by: 30µA max. (SRAM chip)  
– Read: 10mA max. (Flash chip)  
– Stand-by: 100µA max. (Flash chip)  
BGA  
LGA  
LBGA48 (ZM)  
6 x 8 solder balls  
LGA48 (ZN)  
6 x 8 solder lands  
FLASH MEMORY  
8 Mbit (1Mb x 8) BOOT BLOCK ERASE  
PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte  
Figure 1. Logic Diagram  
– Status Register bits and Ready/Busy Output  
SECURITY PROTECTION MEMORY AREA  
INSTRUCTION ADDRESS CODING: 3 digits  
MEMORY BLOCKS  
V
V
CCF CCS  
– Boot Block (Top or Bottom location)  
– Parameter and Main Blocks  
20  
8
A0-A19  
DQ0-DQ7  
RB  
BLOCK, MULTI-BLOCK and CHIP ERASE  
ERASE SUSPEND and RESUME MODES  
W
EF  
– Read and Program another Block during  
Erase Suspend  
M36W108AT  
M36W108AB  
100,000 PROGRAM/ERASE CYCLES per  
G
BLOCK  
RP  
E1S  
E2S  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code, M36W108AT: D2h  
– Device Code, M36W108AB: DCh  
SRAM  
1 Mbit (128Kb x 8)  
V
SS  
AI02620  
POWER DOWN FEATURES USING TWO  
CHIP ENABLE INPUTS  
LOW V  
DATA RETENTION: 2V  
CC  
March 1999  
1/36  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

M36W108AB120ZM1T 替代型号

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