M36W0R6050T3

更新时间： 2024-11-19 04:18:51

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存静态存储器
页数	文件大小	规格书
23页	469K
描述
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

M36W0R6050T3 数据手册

M36P0R9070E0

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory

128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Feature summary

FBGA

■ Multi-Chip Package

– 1 die of 512 Mbit (32Mb x 16, Multiple

Bank, Multi-Level, Burst) Flash Memory

– 1 die of 128Mbit (8Mb x16) PSRAM

■ Supply voltage

TFBGA107 (ZAC)

– V

= V

= 1.7 to 1.95V

DDQ

DDF

PPF

CCP

= 9V for fast program

■ Block locking

■ Electronic signature

– Manufacturer Code: 20h

– Device Code: 8819

– All Blocks locked at power-up

– Any combination of Blocks can be locked

with zero latency

■ ECOPACK® package available

– WP for Block Lock-Down

– Absolute Write Protection with V

= V

PPF

Flash memory

PSRAM

■ Synchronous / Asynchronous Read

– Synchronous Burst Read mode:

108MHz, 66MHz

– Asynchronous Page Read mode

– Random Access: 96ns

■ Access time: 70ns

■ User-selectable operating modes

– Asynchronous modes: Random Read, and

Write, Page Read

■ Programming time

– Synchronous modes: NOR-Flash, Full

Synchronous (Burst Read and Write)

– 4.2µs typical Word program time using

Buffer Enhanced Factory Program

command

■ Asynchronous Page Read

– Page Size: 4, 8 or 16 Words

– Subsequent Read Within Page: 20ns

■ Memory organization

– Multiple bank memory array: 64 Mbit banks

■ Burst Read

– Four Extended Flash Array (EFA) Blocks of

64 Kbits

– Fixed Length (4, 8, 16 or 32 Words) or

Continuous

■ Dual operations

– Maximum Clock Frequency: 80MHz

– program/erase in one Bank while read in

others

– No delay between read and write

operations

■ Low Power Consumption

– Active Current: < 25mA

– Standby Current: 200µA

– Deep Power-Down Current: 10µA

■ Security

■ Low Power Features

– 2112-bit user programmable OTP Cells

– 64-bit unique device number

– Partial Array Self Refresh (PASR)

– Deep Power-Down (DPD) Mode

■ 100,000 program/erase cycles per block

■ Common Flash Interface (CFI)

November 2007

Rev 3

1/23

www.numonyx.com

12 3 4 5 6 7...23

中文翻译

下载PDF

与M36W0R6050T3相关器件

型号	品牌	获取价格	描述	数据表
M36W0R6050T3ZAQE	NUMONYX	获取价格	64-Mbit (4 Mbits 】16, multiple bank, burst) F
M36W0R6050T3ZAQF	NUMONYX	获取价格	64-Mbit (4 Mbits 】16, multiple bank, burst) F
M36W0R6050U4ZAME	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT
M36W0R6050U4ZSE	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA56, 8 X 6 MM, 1.20 MM HEIGHT, 0.50 MM PITCH,
M36W0R6050U4ZSF	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA56, 8 X 6 MM, 1.20 MM HEIGHT, 0.50 MM PITCH,
M36W0R7050B0ZAQE	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36W0R7050B0ZAQF	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36W0R7050T0ZAQF	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
M36W0R7050T0ZAQT	NUMONYX	获取价格	Memory Circuit, 8MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
M36W0T7040T0ZAQT	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88

与M36W0R6050T3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

44

产品中心

服务支持

精选活动

关于我们

帮助中心

M36W0R6050T3

M36W0R6050T3 数据手册

与M36W0R6050T3相关器件

与M36W0R6050T3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

M36W0R6050T3

M36W0R6050T3 数据手册

与M36W0R6050T3相关器件

与M36W0R6050T3相关文章

您还可以找

您在本页遇到什么问题？