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M36P0R9060E0ZACF PDF预览

M36P0R9060E0ZACF

更新时间： 2024-09-28 02:52:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存静态存储器
页数 文件大小 规格书
23页 204K
描述
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

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M36P0R9060E0ZACF 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：BGA包装说明：8 X 11 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-107
针数：107Reach Compliance Code：compliant
HTS代码：8542.32.00.71风险等级：5.16
最长访问时间：70 ns其他特性：PSRAM IS ORGANIZED AS 4M X 16
JESD-30 代码：R-PBGA-B107长度：11 mm
内存密度：536870912 bit内存集成电路类型：MEMORY CIRCUIT
内存宽度：16混合内存类型：FLASH+PSRAM
功能数量：1端子数量：107
字数：33554432 words字数代码：32000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-30 °C组织：32MX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装等效代码：BGA107,9X12,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度（摄氏度）：260
电源：1.8 V认证状态：Not Qualified
座面最大高度：1.2 mm子类别：Other Memory ICs
最大供电电压 (Vsup)：1.95 V最小供电电压 (Vsup)：1.7 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：OTHER
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
宽度：8 mmBase Number Matches：1

M36P0R9060E0ZACF 数据手册

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M36P0R9060E0  
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory  
64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package  
Feature summary  
■ Multi-Chip Package  
FBGA  
– 1 die of 512 Mbit (32Mb x 16, Multiple  
Bank, Multi-Level, Burst) Flash memory  
– 1 die of 64 Mbit (4Mb x16) PSRAM  
■ Supply voltage  
TFBGA107 (ZAC)  
– V  
– V  
= V  
= V  
= 1.7 to 1.95V  
DDQ  
DDF  
PPF  
CCP  
= 9V for fast program  
■ Block locking  
■ Electronic signature  
– Manufacturer Code: 20h  
– Device Code: 8819  
– All Blocks locked at power-up  
– Any combination of Blocks can be locked  
with zero latency  
■ ECOPACK® package  
– WP for Block Lock-Down  
F
Flash memory  
– Absolute Write Protection with V  
= V  
SS  
PPF  
■ Synchronous / asynchronous read  
PSRAM  
■ User-selectable operating modes  
– Synchronous Burst Read mode:  
108MHz, 66MHz  
– Asynchronous modes: Random Read, and  
Write, Page Read  
– Asynchronous Page Read mode  
– Random Access: 96ns  
– Synchronous modes: NOR-Flash, Full  
Synchronous (Burst Read and Write)  
■ Programming time  
– 4.2µs typical Word program time using  
Buffer Enhanced Factory Program  
command  
■ Asynchronous Random Read  
– Access time: 70ns  
■ Asynchronous Page Read  
■ Memory organization  
– Page size: 4, 8 or 16 Words  
– Subsequent Read within Page: 20ns  
– Multiple Bank memory array: 64 Mbit banks  
– Four Extended Flash Array (EFA) Blocks of  
64 Kbits  
■ Burst Read  
– Fixed length (4, 8, 16 or 32 Words) or  
Continuous  
■ Dual operations  
– program/erase in one Bank while read in  
others  
■ Low power consumption  
– Active current: < 25mA  
– No delay between read and write  
operations  
– Standby current: 140µA  
– Deep Power-Down current: < 10µA  
■ Security  
– 64 bit unique device number  
– 2112 bit user programmable OTP Cells  
■ Low-power features  
– Partial Array Self-Refresh (PASR)  
– Deep Power-Down (DPD) Mode  
■ 100,000 Program/erase cycles per block  
■ Common Flash Interface (CFI)  
– Automatic Temperature-compensated Self-  
Refresh  
July 2006  
Rev. 2  
1/23  
www.st.com  
1
1234567...23

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZAC NUMONYX

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZAC STMICROELECTRONICS

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZACE NUMONYX

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZACE STMICROELECTRONICS

获取价格

 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8

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