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M36W0R5040U4ZSF

更新时间： 2023-01-02 16:09:07
品牌 Logo 应用领域
恒忆 - NUMONYX 静态存储器
页数 文件大小 规格书
28页 532K
描述
Memory Circuit, Flash+PSRAM, CMOS, PBGA56

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中文翻译

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M36W0R5040U4ZSF 数据手册

 浏览型号M36W0R5040U4ZSF的Datasheet PDF文件第2页浏览型号M36W0R5040U4ZSF的Datasheet PDF文件第3页浏览型号M36W0R5040U4ZSF的Datasheet PDF文件第4页浏览型号M36W0R5040U4ZSF的Datasheet PDF文件第5页浏览型号M36W0R5040U4ZSF的Datasheet PDF文件第6页浏览型号M36W0R5040U4ZSF的Datasheet PDF文件第7页 
M36W0Rx0x0UL4  
32- or 64-Mbit (mux I/O, multiple bank, multilevel, burst) flash  
memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP  
Features  
■ Multichip package  
– 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit  
(4 Mbit x 16) mux I/O multiple bank,  
multilevel, burst) flash memory  
TFBGA88 (ZAM)  
8 x 10 mm  
TFBGA56 (ZS)  
8 x 6 mm  
– 1 die of 16/32 Mbit mux I/O, burst PSRAM  
■ Supply voltage  
– WP for block lock-down  
■ Security  
– V = V  
= 1.7 to 1.95 V  
DD  
DDQ  
– V  
= 9 V for fast programming  
PPF  
– 128 bit user programmable OTP cells  
– 64 bit unique device number  
■ Electronic signature  
– Manufacturer code: 20h  
■ 100 000 program/erase cycles per block  
– 32 Mbit flash device codes:  
Top - M36W0R5040U4: 8828h  
Bottom - M36W0R5040L4: 8829h  
PSRAM  
■ Asynchronous modes  
– 64 Mbit flash device codes:  
Top - M36W0R6040U4 and  
M36W0R6050U4: 88C0h  
Bottom - M36W0R6040L4 and  
M36W0R6050L4: 88C1h  
– Random read 70 ns access time  
– Asynchronous write  
■ Synchronous mode:  
– NOR flash  
Flash memory  
– Full synchronous (burst read and write)  
■ Synchronous/asynchronous read  
– Synchronous burst read mode: 66 MHz  
– Random access: 70 ns  
■ Burst read/write operations  
– 4-, 8- and 16-word  
– Clock frequency: 83 MHz  
■ Synchronous burst read suspend  
■ Low power consumption  
– Active current: < 20 mA  
– Standby current: 70 µA  
■ Programming time  
– 10 µs by word typical for factory program  
– Double/quadruple word program option  
■ Low power features  
– Partial array self-refresh (PASR)  
– Deep power-down (DPD) mode  
■ Memory blocks  
– Multiple bank memory array: 4 Mbit banks  
– Parameter blocks (top or bottom location)  
– Automatic temperature-compensated self-  
Refresh (ATSR)  
■ Dual operations  
– Program erase in 1 bank, read in others  
– No delay between read and write  
Table 1.  
Device summary  
M36W0Rx0x0UL4  
■ Common flash interface (CFI)  
M36W0R5040U4  
M36W0R6040U4  
M36W0R6050U4  
M36W0R5040L4  
M36W0R6040L4  
M36W0R6050L4  
■ Block locking  
– All blocks locked at power-up  
– Any combination of blocks can be locked  
July 2008  
Rev 6  
1/28  
www.numonyx.com  
1
1234567...28

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