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M36W0R6040B3ZAQF PDF预览

M36W0R6040B3ZAQF

更新时间: 2024-01-22 01:26:01
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路静态存储器
页数 文件大小 规格书
23页 469K
描述
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP

M36W0R6040B3ZAQF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA88,8X12,32针数:88
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.6Is Samacsys:N
最长访问时间:70 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 1M X 16
JESD-30 代码:R-PBGA-B88长度:10 mm
内存密度:67108864 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16混合内存类型:FLASH+PSRAM
功能数量:1端子数量:88
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-30 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA88,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00011 A
子类别:Other Memory ICs最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

M36W0R6040B3ZAQF 数据手册

 浏览型号M36W0R6040B3ZAQF的Datasheet PDF文件第2页浏览型号M36W0R6040B3ZAQF的Datasheet PDF文件第3页浏览型号M36W0R6040B3ZAQF的Datasheet PDF文件第4页浏览型号M36W0R6040B3ZAQF的Datasheet PDF文件第5页浏览型号M36W0R6040B3ZAQF的Datasheet PDF文件第6页浏览型号M36W0R6040B3ZAQF的Datasheet PDF文件第7页 
M36P0R9070E0  
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory  
128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package  
Feature summary  
FBGA  
Multi-Chip Package  
– 1 die of 512 Mbit (32Mb x 16, Multiple  
Bank, Multi-Level, Burst) Flash Memory  
– 1 die of 128Mbit (8Mb x16) PSRAM  
Supply voltage  
TFBGA107 (ZAC)  
– V  
– V  
= V  
= V  
= 1.7 to 1.95V  
DDQ  
DDF  
PPF  
CCP  
= 9V for fast program  
Block locking  
Electronic signature  
– Manufacturer Code: 20h  
– Device Code: 8819  
– All Blocks locked at power-up  
– Any combination of Blocks can be locked  
with zero latency  
ECOPACK® package available  
– WP for Block Lock-Down  
F
– Absolute Write Protection with V  
= V  
SS  
PPF  
Flash memory  
PSRAM  
Synchronous / Asynchronous Read  
– Synchronous Burst Read mode:  
108MHz, 66MHz  
– Asynchronous Page Read mode  
– Random Access: 96ns  
Access time: 70ns  
User-selectable operating modes  
– Asynchronous modes: Random Read, and  
Write, Page Read  
Programming time  
– Synchronous modes: NOR-Flash, Full  
Synchronous (Burst Read and Write)  
– 4.2µs typical Word program time using  
Buffer Enhanced Factory Program  
command  
Asynchronous Page Read  
– Page Size: 4, 8 or 16 Words  
– Subsequent Read Within Page: 20ns  
Memory organization  
– Multiple bank memory array: 64 Mbit banks  
Burst Read  
– Four Extended Flash Array (EFA) Blocks of  
64 Kbits  
– Fixed Length (4, 8, 16 or 32 Words) or  
Continuous  
Dual operations  
– Maximum Clock Frequency: 80MHz  
– program/erase in one Bank while read in  
others  
– No delay between read and write  
operations  
Low Power Consumption  
– Active Current: < 25mA  
– Standby Current: 200µA  
– Deep Power-Down Current: 10µA  
Security  
Low Power Features  
– 2112-bit user programmable OTP Cells  
– 64-bit unique device number  
– Partial Array Self Refresh (PASR)  
– Deep Power-Down (DPD) Mode  
100,000 program/erase cycles per block  
Common Flash Interface (CFI)  
November 2007  
Rev 3  
1/23  
www.numonyx.com  
1

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