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M36P0R9070E0ZAC PDF预览

M36P0R9070E0ZAC

更新时间： 2024-11-02 02:52:35
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路静态存储器
页数 文件大小 规格书
23页 469K
描述
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

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M36P0R9070E0ZAC 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：BGA包装说明：TFBGA, BGA107,9X12,32
针数：107Reach Compliance Code：unknown
HTS代码：8542.32.00.71风险等级：5.13
最长访问时间：96 ns其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16
JESD-30 代码：R-PBGA-B107长度：11 mm
内存密度：536870912 bit内存集成电路类型：MEMORY CIRCUIT
内存宽度：16混合内存类型：FLASH+PSRAM
功能数量：1端子数量：107
字数：33554432 words字数代码：32000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-30 °C组织：32MX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装等效代码：BGA107,9X12,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度（摄氏度）：NOT SPECIFIED
电源：1.8 V认证状态：Not Qualified
座面最大高度：1.2 mm最大待机电流：0.0002 A
子类别：Other Memory ICs最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：8 mm
Base Number Matches：1

M36P0R9070E0ZAC 数据手册

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M36P0R9070E0  
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory  
128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package  
Feature summary  
FBGA  
■ Multi-Chip Package  
– 1 die of 512 Mbit (32Mb x 16, Multiple  
Bank, Multi-Level, Burst) Flash Memory  
– 1 die of 128Mbit (8Mb x16) PSRAM  
■ Supply voltage  
TFBGA107 (ZAC)  
– V  
– V  
= V  
= V  
= 1.7 to 1.95V  
DDQ  
DDF  
PPF  
CCP  
= 9V for fast program  
■ Block locking  
■ Electronic signature  
– Manufacturer Code: 20h  
– Device Code: 8819  
– All Blocks locked at power-up  
– Any combination of Blocks can be locked  
with zero latency  
■ ECOPACK® package available  
– WP for Block Lock-Down  
F
– Absolute Write Protection with V  
= V  
SS  
PPF  
Flash memory  
PSRAM  
■ Synchronous / Asynchronous Read  
– Synchronous Burst Read mode:  
108MHz, 66MHz  
– Asynchronous Page Read mode  
– Random Access: 96ns  
■ Access time: 70ns  
■ User-selectable operating modes  
– Asynchronous modes: Random Read, and  
Write, Page Read  
■ Programming time  
– Synchronous modes: NOR-Flash, Full  
Synchronous (Burst Read and Write)  
– 4.2µs typical Word program time using  
Buffer Enhanced Factory Program  
command  
■ Asynchronous Page Read  
– Page Size: 4, 8 or 16 Words  
– Subsequent Read Within Page: 20ns  
■ Memory organization  
– Multiple bank memory array: 64 Mbit banks  
■ Burst Read  
– Four Extended Flash Array (EFA) Blocks of  
64 Kbits  
– Fixed Length (4, 8, 16 or 32 Words) or  
Continuous  
■ Dual operations  
– Maximum Clock Frequency: 80MHz  
– program/erase in one Bank while read in  
others  
– No delay between read and write  
operations  
■ Low Power Consumption  
– Active Current: < 25mA  
– Standby Current: 200µA  
– Deep Power-Down Current: 10µA  
■ Security  
■ Low Power Features  
– 2112-bit user programmable OTP Cells  
– 64-bit unique device number  
– Partial Array Self Refresh (PASR)  
– Deep Power-Down (DPD) Mode  
■ 100,000 program/erase cycles per block  
■ Common Flash Interface (CFI)  
November 2007  
Rev 3  
1/23  
www.numonyx.com  
1
1234567...23

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与M36P0R9070E0ZAC相关器件

型号 品牌 获取价格 描述 数据表
M36P0R9070E0ZACE NUMONYX

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M36P0R9070E0ZACE STMICROELECTRONICS

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZACF NUMONYX

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M36W0R5020B0 STMICROELECTRONICS

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 		32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Ch
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 		32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Ch
M36W0R5020B0ZAQE STMICROELECTRONICS

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 		32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Ch
M36W0R5020B0ZAQF STMICROELECTRONICS

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 		32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Ch
M36W0R5020B0ZAQT STMICROELECTRONICS

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 		32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Ch

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