M36P0R9060N0ZANE

更新时间： 2024-09-28 02:52:35

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存内存集成电路静态存储器
页数	文件大小	规格书
23页	455K
描述
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package

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M36P0R9060N0ZANE 数据手册

M36P0R9060N0

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory

64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package

Preliminary Data

Feature summary

■ Multi-Chip Package

FBGA

– 1 die of 512 Mbit (32Mb x 16, Multiple

Bank, Multi-Level, Burst) Flash memory

– 1 die of 64 Mbit (4Mb x16) PSRAM

■ Supply voltage

TFBGA107 (ZAN)

– V

= V

= 1.7 to 1.95V

DDQ

DDF

PPF

CCP

= 9V for fast program

■ Electronic signature

– Manufacturer Code: 20h

– Device Code: 8833

■ 100,000 Program/erase cycles per block

■ Block locking

■ ECOPACK® package

– All Blocks locked at power-up

Flash memory

– Any combination of Blocks can be locked

with zero latency

■ Multiplexed Address/Data

■ Synchronous / Asynchronous Read

– WP for Block Lock-Down

– Absolute Write Protection with V

= V

PPF

– Synchronous Burst Read mode:

108MHz, 66MHz

■ Common Flash Interface (CFI)

– Asynchronous Page Read mode

– Random Access: 96ns

PSRAM

■ Multiplexed Address/Data bus

■ Asynchronous operating modes

■ Programming time

– 4.2µs typical Word program time using

Buffer Enhanced Factory Program

command

– Random Read: 70ns access time

– Asynchronous Write

■ Synchronous modes

■ Memory organization

– Synchronous Read: Fixed length (4-, 8-,

16-, and 32-Word) or continuous burst

– Clock Frequency: 83MHz (max)

– Multiple Bank Memory Array: 64 Mbit

Banks

– Four Extended Flash Array (EFA) Blocks of

64 Kbits

– Synchronous Write: continuous burst

■ Low-power features

■ Dual operations

– Partial Array Self-Refresh (PASR)

– Deep Power-Down (DPD) mode

– program/erase in one Bank while read in

others

– Automatic Temperature-compensated Self-

Refresh

– No delay between read and write

operations

■ Security

– 64 bit unique device number

– 2112 bit user programmable OTP Cells

November 2007

Rev 0.2

1/23

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.numonyx.com

12 3 4 5 6 7...23

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与M36P0R9060N0ZANE相关器件

型号	品牌	获取价格	描述	数据表
M36P0R9060N0ZANF	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9070E0	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0_06	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZAC	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZAC	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZACE	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZACE	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZACF	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZACF	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8

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