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M36P0R9070E0ZACF PDF预览

M36P0R9070E0ZACF

更新时间: 2024-01-04 19:51:06
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存内存集成电路静态存储器
页数 文件大小 规格书
23页 469K
描述
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

M36P0R9070E0ZACF 数据手册

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M36P0R9070E0  
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory  
128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package  
Feature summary  
FBGA  
Multi-Chip Package  
– 1 die of 512 Mbit (32Mb x 16, Multiple  
Bank, Multi-Level, Burst) Flash Memory  
– 1 die of 128Mbit (8Mb x16) PSRAM  
Supply voltage  
TFBGA107 (ZAC)  
– V  
– V  
= V  
= V  
= 1.7 to 1.95V  
DDQ  
DDF  
PPF  
CCP  
= 9V for fast program  
Block locking  
Electronic signature  
– Manufacturer Code: 20h  
– Device Code: 8819  
– All Blocks locked at power-up  
– Any combination of Blocks can be locked  
with zero latency  
ECOPACK® package available  
– WP for Block Lock-Down  
F
– Absolute Write Protection with V  
= V  
SS  
PPF  
Flash memory  
PSRAM  
Synchronous / Asynchronous Read  
– Synchronous Burst Read mode:  
108MHz, 66MHz  
– Asynchronous Page Read mode  
– Random Access: 96ns  
Access time: 70ns  
User-selectable operating modes  
– Asynchronous modes: Random Read, and  
Write, Page Read  
Programming time  
– Synchronous modes: NOR-Flash, Full  
Synchronous (Burst Read and Write)  
– 4.2µs typical Word program time using  
Buffer Enhanced Factory Program  
command  
Asynchronous Page Read  
– Page Size: 4, 8 or 16 Words  
– Subsequent Read Within Page: 20ns  
Memory organization  
– Multiple bank memory array: 64 Mbit banks  
Burst Read  
– Four Extended Flash Array (EFA) Blocks of  
64 Kbits  
– Fixed Length (4, 8, 16 or 32 Words) or  
Continuous  
Dual operations  
– Maximum Clock Frequency: 80MHz  
– program/erase in one Bank while read in  
others  
– No delay between read and write  
operations  
Low Power Consumption  
– Active Current: < 25mA  
– Standby Current: 200µA  
– Deep Power-Down Current: 10µA  
Security  
Low Power Features  
– 2112-bit user programmable OTP Cells  
– 64-bit unique device number  
– Partial Array Self Refresh (PASR)  
– Deep Power-Down (DPD) Mode  
100,000 program/erase cycles per block  
Common Flash Interface (CFI)  
November 2007  
Rev 3  
1/23  
www.numonyx.com  
1

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