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M36P0R9060N0

更新时间： 2024-02-12 23:53:03
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存静态存储器
页数 文件大小 规格书
23页 455K
描述
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package

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M36P0R9060N0 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：BGA
包装说明：TFBGA, BGA107,9X12,32针数：107
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.68最长访问时间：96 ns
其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 4M X 16JESD-30 代码：R-PBGA-B107
长度：11 mm内存密度：536870912 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：16
混合内存类型：FLASH+PSRAM功能数量：1
端子数量：107字数：33554432 words
字数代码：32000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-30 °C
组织：32MX16封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装等效代码：BGA107,9X12,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）：NOT SPECIFIED电源：1.8 V
认证状态：Not Qualified座面最大高度：1.2 mm
子类别：Other Memory ICs最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：8 mm
Base Number Matches：1

M36P0R9060N0 数据手册

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M36P0R9060N0  
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory  
64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package  
Preliminary Data  
Feature summary  
■ Multi-Chip Package  
FBGA  
– 1 die of 512 Mbit (32Mb x 16, Multiple  
Bank, Multi-Level, Burst) Flash memory  
– 1 die of 64 Mbit (4Mb x16) PSRAM  
■ Supply voltage  
TFBGA107 (ZAN)  
– V  
– V  
= V  
= V  
= 1.7 to 1.95V  
DDQ  
DDF  
PPF  
CCP  
= 9V for fast program  
■ Electronic signature  
– Manufacturer Code: 20h  
– Device Code: 8833  
■ 100,000 Program/erase cycles per block  
■ Block locking  
■ ECOPACK® package  
– All Blocks locked at power-up  
Flash memory  
– Any combination of Blocks can be locked  
with zero latency  
■ Multiplexed Address/Data  
■ Synchronous / Asynchronous Read  
– WP for Block Lock-Down  
F
– Absolute Write Protection with V  
= V  
SS  
PPF  
– Synchronous Burst Read mode:  
108MHz, 66MHz  
■ Common Flash Interface (CFI)  
– Asynchronous Page Read mode  
– Random Access: 96ns  
PSRAM  
■ Multiplexed Address/Data bus  
■ Asynchronous operating modes  
■ Programming time  
– 4.2µs typical Word program time using  
Buffer Enhanced Factory Program  
command  
– Random Read: 70ns access time  
– Asynchronous Write  
■ Synchronous modes  
■ Memory organization  
– Synchronous Read: Fixed length (4-, 8-,  
16-, and 32-Word) or continuous burst  
– Clock Frequency: 83MHz (max)  
– Multiple Bank Memory Array: 64 Mbit  
Banks  
– Four Extended Flash Array (EFA) Blocks of  
64 Kbits  
– Synchronous Write: continuous burst  
■ Low-power features  
■ Dual operations  
– Partial Array Self-Refresh (PASR)  
– Deep Power-Down (DPD) mode  
– program/erase in one Bank while read in  
others  
– Automatic Temperature-compensated Self-  
Refresh  
– No delay between read and write  
operations  
■ Security  
– 64 bit unique device number  
– 2112 bit user programmable OTP Cells  
November 2007  
Rev 0.2  
1/23  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.numonyx.com  
1
1234567...23

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZACE NUMONYX

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZACE STMICROELECTRONICS

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0ZACF STMICROELECTRONICS

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 		512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8

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