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M36P0R9070E0ZAC

更新时间： 2024-02-23 03:29:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路静态存储器
页数 文件大小 规格书
26页 201K
描述
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

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M36P0R9070E0ZAC 技术参数

生命周期：Transferred零件包装代码：BGA
包装说明：TFBGA,针数：107
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.27JESD-30 代码：R-PBGA-B107
长度：11 mm内存密度：536870912 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：16
功能数量：1端子数量：107
字数：33554432 words字数代码：32000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-30 °C组织：32MX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：1.95 V最小供电电压 (Vsup)：1.7 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL EXTENDED
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM宽度：8 mm
Base Number Matches：1

M36P0R9070E0ZAC 数据手册

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M36P0R9070E0  
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory  
128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package  
PRELIMINARY DATA  
Features summary  
■ Multi-chip package  
– 1die of 512 Mbit (32Mb x 16, Multiple Bank,  
FBGA  
Multi-Level, Burst) Flash Memory  
– 1 die of 128Mbit (8Mb x16) PSRAM  
■ Supply voltage  
– V  
– V  
= V  
= V = 1.7 to 1.95V  
DDQ  
TFBGA107 (ZAC)  
DDF  
PPF  
CCP  
= 9V for fast program (12V tolerant)  
■ Electronic signature  
– Manufacturer Code: 20h  
– Device Code: 8819  
■ Security  
– 2112-bit user programmable OTP Cells  
– 64-bit unique device number  
■ Package  
■ 100,000 program/erase cycles per block  
– ECOPACK®  
■ Block locking  
Flash memory  
– All Blocks locked at power-up  
■ Synchronous / asynchronous read  
– Any combination of Blocks can be locked  
with zero latency  
– Synchronous Burst Read mode:  
108MHz, 66MHz  
– WP for Block Lock-Down  
F
– Asynchronous Page Read mode  
– Absolute Write Protection with V  
= V  
SS  
PPF  
– Random Access: 93ns  
■ Common Flash Interface (CFI)  
■ Programming time  
PSRAM  
– 4µs typical Word program time using Buffer  
Enhanced Factory Program command  
■ Access time: 70ns  
■ Memory organization  
■
Asynchronous Page Read  
– Multiple Bank Memory Array: 64 Mbit  
Banks  
– Page Size: 4, 8 or 16 Words  
– Subsequent read within page: 20ns  
– Four Extended Flash Array (EFA) Blocks of  
64 Kbits  
■ Low power features  
– Partial Array Self Refresh (PASR)  
– Deep Power-Down mode (DPD)  
■ Dual operations  
– program/erase in one Bank while read in  
others  
■
Synchronous Burst Read/Write  
– No delay between read and write  
operations  
Rev. 1  
1/26  
November 2005  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
1
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M36P0R9070E0ZACF NUMONYX

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 		32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Ch
M36W0R5020B0ZAQF STMICROELECTRONICS

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 		32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Ch
M36W0R5020B0ZAQT STMICROELECTRONICS

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