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M36W0R5020T0ZAQT

更新时间： 2024-01-23 12:47:53

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存静态存储器
页数	文件大小	规格书
26页	181K
描述
32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

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中文翻译

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数据手册

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M36W0R5020T0ZAQT 数据手册

M36W0R5020T0

M36W0R5020B0

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory

and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

FEATURES SUMMARY

■

MULTI-CHIP PACKAGE

Figure 1. Package

–

1 die of 32 Mbit (2Mb x 16) Flash Memory

1 die of 4 Mbit (256Kb x16) SRAM

■

SUPPLY VOLTAGE

V_DDF= V_DDQ= V_DDS= 1.7 to 1.95V

–

FBGA

■

LOW POWER CONSUMPTION

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

Device Code (Top Flash Configuration):

8814h

–

Device Code (Bottom Flash

Configuration): 8815h

Stacked TFBGA88

(ZAQ)

■

PACKAGE

–

Compliant with Lead-Free Soldering

Processes

–

Lead-Free Versions

FLASH MEMORY

■

BLOCK LOCKING

■

PROGRAMMING TIME

–

All blocks locked at Power-up

Any combination of blocks can be locked

WP_Ffor Block Lock-Down

–

8µs by Word typical for Fast Factory

Program

–

Double/Quadruple Word Program option

Enhanced Factory Program options

SECURITY

–

128-bit user programmable OTP cells

64-bit unique device number

■

MEMORY BLOCKS

–

Multiple Bank Memory Array: 4 Mbit

Banks

■

COMMON FLASH INTERFACE (CFI)

100,000 PROGRAM/ERASE CYCLES per

BLOCK

–

Parameter Blocks (Top or Bottom

location)

SRAM

SYNCHRONOUS / ASYNCHRONOUS READ

■

ACCESS TIME: 70ns

LOW V_DDSDATA RETENTION: 1.0V

POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

–

Synchronous Burst Read mode: 66MHz

Asynchronous/ Synchronous Page Read

mode

–

Random Access: 70ns

■

DUAL OPERATIONS

–

Program Erase in one Bank while Read in

others

–

No delay between Read and Write

operations

December 2004

1/26

12 3 4 5 6 7...26

中文翻译

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与M36W0R5020T0ZAQT相关器件

型号	品牌	获取价格	描述	数据表
M36W0R5040L4ZAME	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 2MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT
M36W0R5040L4ZAMF	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 2MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT
M36W0R5040L4ZSE	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, CMOS, PBGA56
M36W0R5040U4ZAME	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 2MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT
M36W0R5040U4ZAMF	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 2MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT
M36W0R5040U4ZSF	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, CMOS, PBGA56
M36W0R6030B0	STMICROELECTRONICS	获取价格	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Ch
M36W0R6030B0ZAQ	STMICROELECTRONICS	获取价格	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Ch
M36W0R6030B0ZAQE	STMICROELECTRONICS	获取价格	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Ch
M36W0R6030B0ZAQF	STMICROELECTRONICS	获取价格	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Ch

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