Datasheet > M36LLR8860B1ZAQF

M36LLR8860B1ZAQF

更新时间： 2023-01-03 09:50:30

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	462K
描述
SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, ROHS COMPLIANT, LFBGA-88

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数据手册

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M36LLR8860B1ZAQF 数据手册

M36LLR8860T1, M36LLR8860D1

M36LLR8860M1, M36LLR8860B1

2 x 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory

64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

FEATURES SUMMARY

■

MULTI-CHIP PACKAGE

Figure 1. Package

–

2 dice of 256 Mbit (16Mb x16, Multiple

Bank, Multi-level, Burst) Flash Memory

–

1 die of 64 Mbit (4Mb x16) Pseudo SRAM

SUPPLY VOLTAGE

FBGA

–

1.95V

= V

= 1.7 to

DDQF

DDF1

DDF2

CCP

–

= 9V for fast program (12V tolerant)

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

LFBGA88 (ZAQ)

8 x 10mm

Top Configuration (Top + Top)

M36LLR8860T1: 880Dh + 880Dh

–

Mixed Configuration (Bottom + Top)

M36LLR8860D1: 880Eh + 880Dh

Mixed Configuration (Top + Bottom)

M36LLR8860M1: 880Dh + 880Eh

■

DUAL OPERATIONS

–

program/erase in one Bank while read in

others

Bottom Configuration (Bottom + Bottom)

M36LLR8860B1: 880Eh + 880Eh

–

No delay between read and write

operations

■

PACKAGE

■

SECURITY

–

Compliant with Lead-Free Soldering

Processes

Lead-Free Versions

–

64 bit unique device number

2112 bit user programmable OTP Cells

–

FLASH MEMORY

BLOCK LOCKING

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

All blocks locked at power-up

Any combination of blocks can be locked

with zero latency

–

Synchronous Burst Read mode: 54MHz

Asynchronous Page Read mode

Random Access: 85ns

–

WP for Block Lock-Down

Absolute Write Protection with V

= V

■

SYNCHRONOUS BURST READ SUSPEND

PROGRAMMING TIME

PPF

PSRAM

■

ACCESS TIME: 70ns

ASYNCHRONOUS PAGE READ

–

10µs typical Word program time using

Buffer Enhanced Factory Program

command

■

–

Page Size: 16 words

Subsequent read within page: 20ns

■

MEMORY ORGANIZATION

–

Multiple Bank Memory Array: 16 Mbit

Banks

Parameter Blocks (Top or Bottom

location)

■

LOW POWER FEATURES

–

Temperature Compensated Refresh

(TCR)

–

Partial Array Refresh (PAR)

Deep Power-Down (DPD) Mode

■

COMMON FLASH INTERFACE (CFI)

100,000 PROGRAM/ERASE CYCLES per

BLOCK

SYNCHRONOUS BURST READ/WRITE

July 2005

1/18

12 3 4 5 6 7...18

中文翻译

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与M36LLR8860B1ZAQF相关器件

型号	品牌	获取价格	描述	数据表
M36LLR8860D1ZAQE	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36LLR8860D1ZAQF	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36LLR8860D1ZAQT	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, LFBGA-88
M36LLR8860M1ZAQ	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, LFBGA-88
M36LLR8860M1ZAQE	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36LLR8860M1ZAQF	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36LLR8860M1ZAQT	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, LFBGA-88
M36LLR8860T1ZAQ	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, LFBGA-88
M36LLR8860T1ZAQE	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36LLR8860T1ZAQF	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, ROHS COMPLIANT, LFBGA-88

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