Datasheet > M36P0R8070E0

M36P0R8070E0

更新时间： 2024-09-28 04:18:51

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存静态存储器
页数	文件大小	规格书
22页	639K
描述
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

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中文翻译

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M36P0R8070E0 数据手册

M36P0R8070E0

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory

128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

Features

■ Multichip package

– 1 die of 256 Mbit (16 Mb x 16, multiple

bank, multilevel, burst) Flash memory

FBGA

– 1 die of 128 Mbit (8 Mb x16) PSRAM

■ Supply voltage

– V

= V

= 1.7 to 1.95 V

DDQ

TFBGA107 (ZAC)

DDF

PPF

CCP

= 9 V for fast program (12 V tolerant)

■ Electronic signature

– Manufacturer code: 20h

– Device code: 8818

■ Block locking

■ Package

– All blocks locked at power-up

– ECOPACK®

– Any combination of blocks can be locked

with zero latency

Flash memory

■ Synchronous/asynchronous read

– WP for block lock-down

– Synchronous burst read mode:

108 MHz, 66 MHz

– Absolute write protection with V

= V

PPF SS

■ CFI (common Flash interface)

– Asynchronous page read mode

– Random access: 93 ns

PSRAM

■ Access time: 70 ns

■ Programming time

■

Asynchronous page read

– 4 µs typical Word program time using

Buffer Enhanced Factory Program

command

– Page size: 4, 8 or 16 words

– Subsequent read within page: 20 ns

■ Memory organization

■ Synchronous burst read/write

– Multiple bank memory array: 32 Mbit banks

– Four EFA (extended flash array) blocks of

64 Kbits

■ Low power consumption

– Active current: < 25 mA

– Standby current: 200 µA

– Deep power-down current: 10 µA

■ Dual operations

– Program/erase in one bank while read in

others

■ Low power features

– PASR (partial array self refresh)

– DPD (deep power-down) mode

– No delay between read and write

operations

■ Security

– 64bit unique device number

– 2112 bit user programmable OTP Cells

■ 100 000 program/erase cycles per block

December 2007

Rev 2

1/22

www.numonyx.com

12 3 4 5 6 7...22

中文翻译

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与M36P0R8070E0相关器件

型号	品牌	获取价格	描述	数据表
M36P0R8070E0ZACE	NUMONYX	获取价格	256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8
M36P0R8070E0ZACF	NUMONYX	获取价格	256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8
M36P0R9060E0	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060E0	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060E0ZACE	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060E0ZACE	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060E0ZACF	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060E0ZACF	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060N0	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060N0ZANE	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V

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