Datasheet > M36LLR8860M1ZAQT

M36LLR8860M1ZAQT

更新时间： 2023-01-02 19:03:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	462K
描述
SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, LFBGA-88

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中文翻译

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数据手册

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M36LLR8860M1ZAQT 数据手册

M36LLR8860T1, M36LLR8860D1

M36LLR8860M1, M36LLR8860B1

2 x 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory

64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

FEATURES SUMMARY

■

MULTI-CHIP PACKAGE

Figure 1. Package

–

2 dice of 256 Mbit (16Mb x16, Multiple

Bank, Multi-level, Burst) Flash Memory

–

1 die of 64 Mbit (4Mb x16) Pseudo SRAM

SUPPLY VOLTAGE

FBGA

–

1.95V

= V

= 1.7 to

DDQF

DDF1

DDF2

CCP

–

= 9V for fast program (12V tolerant)

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

LFBGA88 (ZAQ)

8 x 10mm

Top Configuration (Top + Top)

M36LLR8860T1: 880Dh + 880Dh

–

Mixed Configuration (Bottom + Top)

M36LLR8860D1: 880Eh + 880Dh

Mixed Configuration (Top + Bottom)

M36LLR8860M1: 880Dh + 880Eh

■

DUAL OPERATIONS

–

program/erase in one Bank while read in

others

Bottom Configuration (Bottom + Bottom)

M36LLR8860B1: 880Eh + 880Eh

–

No delay between read and write

operations

■

PACKAGE

■

SECURITY

–

Compliant with Lead-Free Soldering

Processes

Lead-Free Versions

–

64 bit unique device number

2112 bit user programmable OTP Cells

–

FLASH MEMORY

BLOCK LOCKING

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

All blocks locked at power-up

Any combination of blocks can be locked

with zero latency

–

Synchronous Burst Read mode: 54MHz

Asynchronous Page Read mode

Random Access: 85ns

–

WP for Block Lock-Down

Absolute Write Protection with V

= V

■

SYNCHRONOUS BURST READ SUSPEND

PROGRAMMING TIME

PPF

PSRAM

■

ACCESS TIME: 70ns

ASYNCHRONOUS PAGE READ

–

10µs typical Word program time using

Buffer Enhanced Factory Program

command

■

–

Page Size: 16 words

Subsequent read within page: 20ns

■

MEMORY ORGANIZATION

–

Multiple Bank Memory Array: 16 Mbit

Banks

Parameter Blocks (Top or Bottom

location)

■

LOW POWER FEATURES

–

Temperature Compensated Refresh

(TCR)

–

Partial Array Refresh (PAR)

Deep Power-Down (DPD) Mode

■

COMMON FLASH INTERFACE (CFI)

100,000 PROGRAM/ERASE CYCLES per

BLOCK

SYNCHRONOUS BURST READ/WRITE

July 2005

1/18

12 3 4 5 6 7...18

中文翻译

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与M36LLR8860M1ZAQT相关器件

型号	品牌	获取价格	描述	数据表
M36LLR8860T1ZAQ	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, LFBGA-88
M36LLR8860T1ZAQE	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36LLR8860T1ZAQF	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.8 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36P08K4Q3	JAE	获取价格	PIN CONTACT
M36P0R8070E0	NUMONYX	获取价格	256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8
M36P0R8070E0ZACE	NUMONYX	获取价格	256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8
M36P0R8070E0ZACF	NUMONYX	获取价格	256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8
M36P0R9060E0	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060E0	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060E0ZACE	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V

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