M36P0R9060E0

更新时间： 2024-09-28 02:52:35

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存静态存储器
页数	文件大小	规格书
23页	459K
描述
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

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M36P0R9060E0 数据手册

M36P0R9060E0

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory

64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Feature summary

■ Multi-Chip Package

FBGA

– 1 die of 512 Mbit (32Mb x 16, Multiple

Bank, Multi-Level, Burst) Flash memory

– 1 die of 64 Mbit (4Mb x16) PSRAM

■ Supply voltage

TFBGA107 (ZAC)

– V

= V

= 1.7 to 1.95V

DDQ

DDF

PPF

CCP

= 9V for fast program

■ Block locking

■ Electronic signature

– Manufacturer Code: 20h

– Device Code: 8819

– All Blocks locked at power-up

– Any combination of Blocks can be locked

with zero latency

■ ECOPACK® package

– WP for Block Lock-Down

Flash memory

– Absolute Write Protection with V

= V

PPF

■ Synchronous / asynchronous read

PSRAM

■ User-selectable operating modes

– Synchronous Burst Read mode:

108MHz, 66MHz

– Asynchronous Page Read mode

– Random Access: 96ns

– Asynchronous modes: Random Read, and

Write, Page Read

– Synchronous modes: NOR-Flash, Full

Synchronous (Burst Read and Write)

■ Programming time

– 4.2µs typical Word program time using

Buffer Enhanced Factory Program

command

■ Asynchronous Random Read

– Access time: 70ns

■ Asynchronous Page Read

■ Memory organization

– Page size: 4, 8 or 16 Words

– Subsequent Read within Page: 20ns

– Multiple Bank memory array: 64 Mbit banks

– Four Extended Flash Array (EFA) Blocks of

64 Kbits

■ Burst Read

– Fixed length (4, 8, 16 or 32 Words) or

Continuous

■ Dual operations

– program/erase in one Bank while read in

others

– No delay between read and write

operations

■ Low power consumption

– Active current: < 25mA

– Standby current: 140µA

– Deep Power-Down current: < 10µA

■ Security

– 64 bit unique device number

– 2112 bit user programmable OTP Cells

■ Low-power features

– Partial Array Self-Refresh (PASR)

– Deep Power-Down (DPD) Mode

– Automatic Temperature-compensated Self-

Refresh

■ 100,000 Program/erase cycles per block

■ Common Flash Interface (CFI)

November 2007

Rev. 3

1/23

www.numonyx.com

12 3 4 5 6 7...23

中文翻译

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与M36P0R9060E0相关器件

型号	品牌	获取价格	描述	数据表
M36P0R9060E0ZACE	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060E0ZACE	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060E0ZACF	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060E0ZACF	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060N0	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060N0ZANE	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9060N0ZANF	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V
M36P0R9070E0	NUMONYX	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8
M36P0R9070E0_06	STMICROELECTRONICS	获取价格	512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8

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