Datasheet > M29W160EB

M29W160EB

更新时间： 2024-11-17 22:34:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
40页	666K
描述
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

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M29W160EB 数据手册

M29W160ET

M29W160EB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

= 2.7V to 3.6V for Program, Erase

Figure 1. Packages

–

and Read

■

ACCESS TIMES: 70, 90ns

PROGRAMMING TIME

–

10µs per Byte/Word typical

■

35 MEMORY BLOCKS

–

1 Boot Block (Top or Bottom Location)

2 Parameter and 32 Main Blocks

■

PROGRAM/ERASE CONTROLLER

–

Embedded Byte/Word Program

algorithms

TSOP48 (N)

12 x 20mm

ERASE SUSPEND and RESUME MODES

–

Read and Program another Block during

Erase Suspend

UNLOCK BYPASS PROGRAM COMMAND

Faster Production/Batch Programming

–

FBGA

■

TEMPORARY BLOCK UNPROTECTION

MODE

COMMON FLASH INTERFACE

TFBGA48 (ZA)

6 x 8mm

–

64 bit Security Code

LOW POWER CONSUMPTION

Standby and Automatic Standby

■

–

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

–

Manufacturer Code: 0020h

Top Device Code M29W160ET: 22C4h

Bottom Device Code M29W160EB: 2249h

January 2004

1/40

12 3 4 5 6 7...40

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