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M29W160EB70ZA6T PDF预览

M29W160EB70ZA6T

更新时间: 2024-11-05 05:01:07
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路
页数 文件大小 规格书
40页 1035K
描述
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

M29W160EB70ZA6T 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BGA包装说明:6 X 8 MM, 0.80 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.4Is Samacsys:N
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B48
长度:8 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,31
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM切换位:YES
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

M29W160EB70ZA6T 数据手册

 浏览型号M29W160EB70ZA6T的Datasheet PDF文件第2页浏览型号M29W160EB70ZA6T的Datasheet PDF文件第3页浏览型号M29W160EB70ZA6T的Datasheet PDF文件第4页浏览型号M29W160EB70ZA6T的Datasheet PDF文件第5页浏览型号M29W160EB70ZA6T的Datasheet PDF文件第6页浏览型号M29W160EB70ZA6T的Datasheet PDF文件第7页 
M29W160ET  
M29W160EB  
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
V
CC  
= 2.7V to 3.6V for Program, Erase  
and Read  
ACCESS TIMES: 70, 90ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
35 MEMORY BLOCKS  
1 Boot Block (Top or Bottom Location)  
2 Parameter and 32 Main Blocks  
PROGRAM/ERASE CONTROLLER  
Embedded Byte/Word Program  
algorithms  
TSOP48 (N)  
12 x 20mm  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
FBGA  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
TFBGA48 (ZA)  
6 x 8mm  
64 bit Security Code  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29W160ET: 22C4h  
Bottom Device Code M29W160EB: 2249h  
March 2008  
1/40  

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16Mb (2Mb x8 or 1Mb x16), 3V, Boot Block, Parallel NOR Flash Memory
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Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
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16Mb (2Mb x8 or 1Mb x16), 3V, Boot Block, Parallel NOR Flash Memory
M29W160EB7AN6F NUMONYX

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