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M29W160EB70N6E PDF预览

M29W160EB70N6E

更新时间: 2024-11-17 22:07:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
40页 666K
描述
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

M29W160EB70N6E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.36Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:1358537
Samacsys Pin Count:48Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm
Samacsys Released Date:2018-08-01 14:34:36Is Samacsys:N
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e3/e6长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,31端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN/TIN BISMUTH端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29W160EB70N6E 数据手册

 浏览型号M29W160EB70N6E的Datasheet PDF文件第2页浏览型号M29W160EB70N6E的Datasheet PDF文件第3页浏览型号M29W160EB70N6E的Datasheet PDF文件第4页浏览型号M29W160EB70N6E的Datasheet PDF文件第5页浏览型号M29W160EB70N6E的Datasheet PDF文件第6页浏览型号M29W160EB70N6E的Datasheet PDF文件第7页 
M29W160ET  
M29W160EB  
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
= 2.7V to 3.6V for Program, Erase  
Figure 1. Packages  
V
CC  
and Read  
ACCESS TIMES: 70, 90ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
35 MEMORY BLOCKS  
1 Boot Block (Top or Bottom Location)  
2 Parameter and 32 Main Blocks  
PROGRAM/ERASE CONTROLLER  
Embedded Byte/Word Program  
algorithms  
TSOP48 (N)  
12 x 20mm  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
FBGA  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
TFBGA48 (ZA)  
6 x 8mm  
64 bit Security Code  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29W160ET: 22C4h  
Bottom Device Code M29W160EB: 2249h  
January 2004  
1/40  

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