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M29W160EB70ZA3E PDF预览

M29W160EB70ZA3E

更新时间: 2024-11-09 07:11:39
品牌 Logo 应用领域
恒忆 - NUMONYX /
页数 文件大小 规格书
42页 1209K
描述
Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48

M29W160EB70ZA3E 数据手册

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M29W160ET  
M29W160EB  
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
„ SUPPLY VOLTAGE  
Figure 1. Packages  
V
CC = 2.7V to 3.6V for Program, Erase  
and Read  
„ ACCESS TIMES: 70, 90ns  
„ PROGRAMMING TIME  
10μs per Byte/Word typical  
„ 35 MEMORY BLOCKS  
TSOP48 (N)  
12 x 20mm  
1 Boot Block (Top or Bottom Location)  
2 Parameter and 32 Main Blocks  
„ PROGRAM/ERASE CONTROLLER  
FBGA  
Embedded Byte/Word Program  
algorithms  
„ ERASE SUSPEND and RESUME MODES  
TFBGA48 (ZA)  
6 x 8mm  
Read and Program another Block during  
Erase Suspend  
„ UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
BGA  
„ TEMPORARY BLOCK UNPROTECTION  
MODE  
„ COMMON FLASH INTERFACE  
FBGA64 (ZS)  
11 x 13 mm  
64 bit Security Code  
„ LOW POWER CONSUMPTION  
Standby and Automatic Standby  
„ 100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
„ ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29W160ET: 22C4h  
Bottom Device Code M29W160EB: 2249h  
„ Automotive Grade Parts Available  
June 2009  
1/42  

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Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48
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M29W160EB70ZA6 STMICROELECTRONICS

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16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160EB70ZA6 NUMONYX

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M29W160EB70ZA6E STMICROELECTRONICS

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M29W160EB70ZA6E NUMONYX

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M29W160EB70ZA6E MICRON

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16Mb (2Mb x8 or 1Mb x16), 3V, Boot Block, Parallel NOR Flash Memory
M29W160EB70ZA6F STMICROELECTRONICS

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16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160EB70ZA6F NUMONYX

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16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160EB70ZA6F MICRON

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16Mb (2Mb x8 or 1Mb x16), 3V, Boot Block, Parallel NOR Flash Memory