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M29W160EB70ZS6F PDF预览

M29W160EB70ZS6F

更新时间: 2024-11-06 15:17:15
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
47页 640K
描述
16Mb (2Mb x8 or 1Mb x16), 3V, Boot Block, Parallel NOR Flash Memory

M29W160EB70ZS6F 数据手册

 浏览型号M29W160EB70ZS6F的Datasheet PDF文件第2页浏览型号M29W160EB70ZS6F的Datasheet PDF文件第3页浏览型号M29W160EB70ZS6F的Datasheet PDF文件第4页浏览型号M29W160EB70ZS6F的Datasheet PDF文件第5页浏览型号M29W160EB70ZS6F的Datasheet PDF文件第6页浏览型号M29W160EB70ZS6F的Datasheet PDF文件第7页 
16Mb: 3V Embedded Parallel NOR Flash  
Features  
Parallel NOR Flash Embedded Memory  
M29W160ET, M29W160EB  
• Common Flash interface  
– 64-bit security code  
• Low power consumption: Standby and automatic  
mode  
• 100,000 PROGRAM/ERASE cycles per block  
• Electronic signature  
Features  
• Supply voltage  
– VCC = 2.7–3.6V (program, erase, read)  
• Access times  
– 70, 90ns  
• Program time  
– 10µs per byte/word (TYP)  
• Memory organization  
– 3 parameter and 31 main blocks  
– 1 boot block (top or bottom location)  
• Program/erase controller  
– Embedded byte/word program algorithms  
• Erase suspend and resume capability  
– Read or program another block during an ERASE  
SUSPEND operation  
– Manufacturer code: 0020h  
Top device code M29W160ET: 22C4h  
– Bottom device code M29W160EB: 2249h  
• Packages  
– 48-pin TSOP (N) 12mm x 20mm  
– 48-ball TFBGA (ZA) 6mm x 8mm  
– 64-ball FBGA (ZS) 11mm x 13mm  
• Automotive grade parts available  
• UNLOCK BYPASS PROGRAM COMMAND  
– Fast buffered/batch programming  
Temporary block unprotect mode  
PDF: 09005aef84e1488c  
m29W_160e.pdf - Rev. C 02/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2012 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

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