M29W004B-100N1TR

更新时间： 2024-11-30 22:06:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
30页	224K
描述
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

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M29W004B-100N1TR 数据手册

M29W004T

M29W004B

4 Mbit (512Kb x8, Boot Block)

Low Voltage Single Supply Flash Memory

NOT FOR NEW DESIGN

M29W004T and M29W004B are replaced

respectively by the M29W004BT and

M29W004BB

2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

FAST ACCESS TIME: 100ns

FAST PROGRAMMING TIME: 10µs typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Status Register bits and Ready/Busy Output

MEMORY BLOCKS

TSOP40 (N)

10 x 20 mm

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI BLOCK PROTECTION/TEMPORARY

UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code, M29W004T: EAh

– Device Code, M29W004B: EBh

A0-A18

DQ0-DQ7

M29W004T

M29W004B

DESCRIPTION

The M29W004 is a non-volatile memory that may

be erased electrically at the block or chip level and

programmed in-system on a Byte-by-Byte basis

using only a single 2.7V to 3.6V V_CCsupply. For

Program and Erase operations the necessary high

voltages are generated internally. The device can

also be programmed in standard programmers.

AI02063

The array matrix organisation allows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protected against pro-

graming and erase on programming equipment,

and temporarily unprotected to make changes in

June 1999

1/30

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...30

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与M29W004B-100N1TR相关器件

型号	品牌	获取价格	描述	数据表
M29W004B-100N5TR	STMICROELECTRONICS	获取价格	4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-100N6TR	STMICROELECTRONICS	获取价格	4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-120N1TR	STMICROELECTRONICS	获取价格	4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-120N5TR	STMICROELECTRONICS	获取价格	4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-120N6TR	STMICROELECTRONICS	获取价格	4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-150N1	STMICROELECTRONICS	获取价格	暂无描述
M29W004B-150N1TR	STMICROELECTRONICS	获取价格	4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-150N5TR	STMICROELECTRONICS	获取价格	4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-150N6	STMICROELECTRONICS	获取价格	512KX8 FLASH 2.7V PROM, 150ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M29W004B-150N6TR	STMICROELECTRONICS	获取价格	4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

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