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M29W004B-90N1 PDF预览

M29W004B-90N1

更新时间: 2024-12-01 19:58:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
30页 198K
描述
512KX8 FLASH 3V PROM, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

M29W004B-90N1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:10 X 20 MM, PLASTIC, TSOP-40
针数:40Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.68最长访问时间:90 ns
其他特性:BOTTOM BOOT BLOCK启动块:BOTTOM
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G40
JESD-609代码:e0长度:18.4 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1,2,1,7端子数量:40
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP40,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M29W004B-90N1 数据手册

 浏览型号M29W004B-90N1的Datasheet PDF文件第2页浏览型号M29W004B-90N1的Datasheet PDF文件第3页浏览型号M29W004B-90N1的Datasheet PDF文件第4页浏览型号M29W004B-90N1的Datasheet PDF文件第5页浏览型号M29W004B-90N1的Datasheet PDF文件第6页浏览型号M29W004B-90N1的Datasheet PDF文件第7页 
M29W004T  
M29W004B  
4 Mbit (512Kb x8, Boot Block)  
Low Voltage Single Supply Flash Memory  
2.7V to 3.6V SUPPLY VOLTAGEfor  
PROGRAM, ERASE and READ OPERATIONS  
FASTACCESS TIME: 100ns  
FAST PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte  
– Status Register bits and Ready/Busy Output  
MEMORY BLOCKS  
– Boot Block (Top or Bottom location)  
– Parameterand Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
TSOP40 (N)  
10 x 20 mm  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
LOW POWER CONSUMPTION  
Figure 1. Logic Diagram  
– Stand-byand AutomaticStand-by  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARSDATARETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– ManufacturerCode: 20h  
V
CC  
19  
8
– Device Code, M29W004T: EAh  
– Device Code, M29W004B: EBh  
A0-A18  
DQ0-DQ7  
RB  
W
E
M29W004T  
M29W004B  
DESCRIPTION  
The M29W004 is a non-volatile memory that may  
be erased electrically at the block or chiplevel and  
programmed in-system on a Byte-by-Byte basis  
using only a single 2.7V to 3.6V VCC supply. For  
Programand Erase operationsthe necessaryhigh  
voltages are generated internally. The device can  
also be programmed in standard programmers.  
G
RP  
The array matrix organisationallows each block to  
be erased and reprogrammed without affecting  
other blocks. Blocks can be protectedagainst pro-  
graming and erase on programming equipment,  
and temporarily unprotected to make changes in  
the application. Each block can be programmed  
and erased over 100,000 cycles.  
V
SS  
AI02063  
October 1998  
1/30  

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