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M29W004B-90N1TR PDF预览

M29W004B-90N1TR

更新时间: 2024-11-30 22:26:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
30页 224K
描述
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

M29W004B-90N1TR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:10 X 20 MM, PLASTIC, TSOP-40
针数:40Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.68最长访问时间:90 ns
其他特性:BOTTOM BOOT BLOCK启动块:BOTTOM
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G40
JESD-609代码:e0长度:18.4 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1,2,1,7端子数量:40
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP40,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M29W004B-90N1TR 数据手册

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M29W004T  
M29W004B  
4 Mbit (512Kb x8, Boot Block)  
Low Voltage Single Supply Flash Memory  
NOT FOR NEW DESIGN  
M29W004T and M29W004B are replaced  
respectively by the M29W004BT and  
M29W004BB  
2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
FAST ACCESS TIME: 100ns  
FAST PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte  
– Status Register bits and Ready/Busy Output  
MEMORY BLOCKS  
TSOP40 (N)  
10 x 20 mm  
– Boot Block (Top or Bottom location)  
– Parameter and Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
LOW POWER CONSUMPTION  
– Stand-by and Automatic Stand-by  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
V
CC  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code, M29W004T: EAh  
– Device Code, M29W004B: EBh  
19  
8
A0-A18  
DQ0-DQ7  
RB  
W
E
M29W004T  
M29W004B  
G
DESCRIPTION  
The M29W004 is a non-volatile memory that may  
be erased electrically at the block or chip level and  
programmed in-system on a Byte-by-Byte basis  
using only a single 2.7V to 3.6V VCC supply. For  
Program and Erase operations the necessary high  
voltages are generated internally. The device can  
also be programmed in standard programmers.  
RP  
V
SS  
AI02063  
The array matrix organisation allows each block to  
be erased and reprogrammed without affecting  
other blocks. Blocks can be protected against pro-  
graming and erase on programming equipment,  
and temporarily unprotected to make changes in  
June 1999  
1/30  
This is information on a product still in production but not recommended for new designs.  

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