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M29W004BB120N1 PDF预览

M29W004BB120N1

更新时间: 2024-12-01 13:10:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储
页数 文件大小 规格书
20页 159K
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M29W004BB120N1 数据手册

 浏览型号M29W004BB120N1的Datasheet PDF文件第2页浏览型号M29W004BB120N1的Datasheet PDF文件第3页浏览型号M29W004BB120N1的Datasheet PDF文件第4页浏览型号M29W004BB120N1的Datasheet PDF文件第5页浏览型号M29W004BB120N1的Datasheet PDF文件第6页浏览型号M29W004BB120N1的Datasheet PDF文件第7页 
M29W004BT  
M29W004BB  
4 Mbit (512Kb x8, Boot Block)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs by Byte typical  
11 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 8 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
TSOP40 (N)  
10 x 20mm  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
TEMPORARY BLOCK UNPROTECTION  
MODE  
V
CC  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
19  
8
– Standby and Automatic Standby  
A0-A18  
DQ0-DQ7  
RB  
100,000 PROGRAM/ERASE CYCLES per  
W
E
BLOCK  
M29W004BT  
M29W004BB  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
G
RP  
– Manufacturer Code: 20h  
– Top Device Code M29W004BT: EAh  
– Bottom Device Code M29W004BB: EBh  
V
SS  
AI02954  
March 2000  
1/20  

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