M29W004BB120N6

更新时间： 2024-12-01 12:59:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存存储
页数	文件大小	规格书
20页	159K
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数据手册

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M29W004BB120N6 数据手册

M29W004BT

M29W004BB

4 Mbit (512Kb x8, Boot Block)

Low Voltage Single Supply Flash Memory

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 55ns

■ PROGRAMMING TIME

– 10µs by Byte typical

■ 11 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 8 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

TSOP40 (N)

10 x 20mm

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

A0-A18

DQ0-DQ7

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

M29W004BT

M29W004BB

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code M29W004BT: EAh

– Bottom Device Code M29W004BB: EBh

AI02954

March 2000

1/20

12 3 4 5 6 7...20

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