Datasheet > M29F102BB55N1

M29F102BB55N1

更新时间： 2024-09-22 04:38:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		光电二极管
页数	文件大小	规格书
24页	471K
描述
Flash, 64KX16, 55ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40

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M29F102BB55N1 数据手册

M29F102BB

1 Mbit (64Kb x16, Boot Block) Single Supply Flash Memory

FEATURES SUMMARY

■

SINGLE 5V±10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ

OPERATIONS

Figure 1. Package

■

ACCESS TIME: 35ns

PROGRAMMING TIME

–

8µs per Word typical

■

5 MEMORY BLOCKS

–

1 Boot Block (Bottom Location)

2 Parameter and 2 Main Blocks

PLCC44 (K)

PROGRAM/ERASE CONTROLLER

–

Embedded Word Program algorithm

Embedded Multi-Block/Chip Erase

algorithm

–

Status Register Polling and Toggle Bits

■

ERASE SUSPEND and RESUME MODES

TSOP40 (N)

10 x 14mm

–

Read and Program another Block during

Erase Suspend

UNLOCK BYPASS PROGRAM COMMAND

Faster Production/Batch Programming

–

■

TEMPORARY BLOCK UNPROTECTION

MODE

LOW POWER CONSUMPTION

–

Standby and Automatic Standby

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

M28F102 COMPATIBLE

–

Pin-out and Read Mode

20 YEARS DATA RETENTION

Defectivity below 1 ppm/year

ELECTRONIC SIGNATURE

■

–

Manufacturer Code: 0020h

Bottom Device Code M29F102BB: 0097h

■

PACKAGES

–

Compliant with Lead-Free Soldering

Processes

–

Lead-Free Versions

ECOPACK^®PACKAGES AVAILABLE

September 2005

1/24

12 3 4 5 6 7...24

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