Datasheet > M29F105B-90XN1

M29F105B-90XN1

更新时间： 2024-11-09 04:25:19

品牌	Logo	应用领域
恒忆 - NUMONYX		光电二极管
页数	文件大小	规格书
28页	201K
描述
Flash, 64KX16, 90ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40

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数据手册

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M29F105B-90XN1 数据手册

M29F105B

1 Mbit (64Kb x16, Block Erase) Single Supply Flash Memory

5V±10% SUPPLYVOLTAGEfor PROGRAM,

ERASE and READ OPERATIONS

FASTACCESS TIME: 55ns

FAST PROGRAMMING TIME: 10µs typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Word-by-Word

– Status Register bits

MEMORY BLOCKS

– Boot Block (Bottom location)

– Parameterand Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

TSOP40 (N)

10 x 14mm

MULTI-BLOCKPROTECTION/TEMPORARY

UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

LOW POWER CONSUMPTION

Figure 1. Logic Diagram

– Stand-byand AutomaticStand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

– ManufacturerCode: 0020h

– Device Code: 0087h

A0-A15

DQ0-DQ15

Table 1. Signal Names

A0-A15

Address Inputs

M29F105B

DQ0-DQ7

Data Input/Outputs, Command Inputs

Data Input/Outputs

Chip Enable

DQ8-DQ15

Output Enable

AI02115

Write Enable

V_CC

V_SS

Supply Voltage

Ground

May 1998

1/28

12 3 4 5 6 7...28

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与M29F105B-90XN1相关器件

型号	品牌	获取价格	描述	数据表
M29F105B-90XN1TR	NUMONYX	获取价格	64KX16 FLASH 5V PROM, 90ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
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M29F160BB55N1T	STMICROELECTRONICS	获取价格	16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory
M29F160BB55N3	STMICROELECTRONICS	获取价格	1MX16 FLASH 5V PROM, 55ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M29F160BB55N3T	STMICROELECTRONICS	获取价格	16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory
M29F160BB55N6	STMICROELECTRONICS	获取价格	1MX16 FLASH 5V PROM, 55ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M29F160BB55N6T	STMICROELECTRONICS	获取价格	16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory