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M29F105B-70XN1TR PDF预览

M29F105B-70XN1TR

更新时间: 2024-11-09 04:49:39
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管
页数 文件大小 规格书
28页 201K
描述
Flash, 64KX16, 70ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40

M29F105B-70XN1TR 数据手册

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M29F105B  
1 Mbit (64Kb x16, Block Erase) Single Supply Flash Memory  
5V±10% SUPPLYVOLTAGEfor PROGRAM,  
ERASE and READ OPERATIONS  
FASTACCESS TIME: 55ns  
FAST PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Word-by-Word  
– Status Register bits  
MEMORY BLOCKS  
– Boot Block (Bottom location)  
– Parameterand Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
TSOP40 (N)  
10 x 14mm  
MULTI-BLOCKPROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
LOW POWER CONSUMPTION  
Figure 1. Logic Diagram  
– Stand-byand AutomaticStand-by  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– ManufacturerCode: 0020h  
– Device Code: 0087h  
V
CC  
16  
16  
A0-A15  
DQ0-DQ15  
Table 1. Signal Names  
W
E
A0-A15  
Address Inputs  
M29F105B  
DQ0-DQ7  
Data Input/Outputs, Command Inputs  
Data Input/Outputs  
Chip Enable  
G
DQ8-DQ15  
E
G
Output Enable  
V
SS  
AI02115  
W
Write Enable  
VCC  
VSS  
Supply Voltage  
Ground  
May 1998  
1/28  

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