5秒后页面跳转
M29F105B-55XN1TR PDF预览

M29F105B-55XN1TR

更新时间: 2024-09-21 14:52:51
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
28页 201K
描述
Flash, 64KX16, 55ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40

M29F105B-55XN1TR 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:10 X 14 MM, PLASTIC, TSOP-40针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.41
Is Samacsys:N最长访问时间:55 ns
其他特性:100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE启动块:BOTTOM
JESD-30 代码:R-PDSO-G40长度:12.4 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:40字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M29F105B-55XN1TR 数据手册

 浏览型号M29F105B-55XN1TR的Datasheet PDF文件第2页浏览型号M29F105B-55XN1TR的Datasheet PDF文件第3页浏览型号M29F105B-55XN1TR的Datasheet PDF文件第4页浏览型号M29F105B-55XN1TR的Datasheet PDF文件第5页浏览型号M29F105B-55XN1TR的Datasheet PDF文件第6页浏览型号M29F105B-55XN1TR的Datasheet PDF文件第7页 
M29F105B  
1 Mbit (64Kb x16, Block Erase) Single Supply Flash Memory  
5V±10% SUPPLYVOLTAGEfor PROGRAM,  
ERASE and READ OPERATIONS  
FASTACCESS TIME: 55ns  
FAST PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Word-by-Word  
– Status Register bits  
MEMORY BLOCKS  
– Boot Block (Bottom location)  
– Parameterand Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
TSOP40 (N)  
10 x 14mm  
MULTI-BLOCKPROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
LOW POWER CONSUMPTION  
Figure 1. Logic Diagram  
– Stand-byand AutomaticStand-by  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– ManufacturerCode: 0020h  
– Device Code: 0087h  
V
CC  
16  
16  
A0-A15  
DQ0-DQ15  
Table 1. Signal Names  
W
E
A0-A15  
Address Inputs  
M29F105B  
DQ0-DQ7  
Data Input/Outputs, Command Inputs  
Data Input/Outputs  
Chip Enable  
G
DQ8-DQ15  
E
G
Output Enable  
V
SS  
AI02115  
W
Write Enable  
VCC  
VSS  
Supply Voltage  
Ground  
May 1998  
1/28  

与M29F105B-55XN1TR相关器件

型号 品牌 获取价格 描述 数据表
M29F105B-55XN6 NUMONYX

获取价格

Flash, 64KX16, 55ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
M29F105B-55XN6TR NUMONYX

获取价格

64KX16 FLASH 5V PROM, 55ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
M29F105B-70N1 NUMONYX

获取价格

Flash, 64KX16, 70ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
M29F105B-70N1TR NUMONYX

获取价格

64KX16 FLASH 5V PROM, 70ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
M29F105B-70N6 NUMONYX

获取价格

Flash, 64KX16, 70ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
M29F105B-70N6TR NUMONYX

获取价格

64KX16 FLASH 5V PROM, 70ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
M29F105B-70XN1TR NUMONYX

获取价格

Flash, 64KX16, 70ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
M29F105B-70XN6 NUMONYX

获取价格

Flash, 64KX16, 70ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
M29F105B-70XN6TR NUMONYX

获取价格

64KX16 FLASH 5V PROM, 70ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
M29F105B-90N6 NUMONYX

获取价格

Flash, 64KX16, 90ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40